Memory device and driving method of the memory device

ABSTRACT

A memory device which can reduce power consumption and a driving method thereof are disclosed. In a memory element including an inverter and the like, a capacitor for holding data and a capacitor switching element for controlling store and release of charge in the capacitor are provided. The capacitor switching element is designed so that the off-state current is sufficiently low. Therefore, even when power supply of the inverter is stopped after charge corresponding to data is stored in the capacitor, data can be held for a long period of time. In order to return data, potentials of output and input terminals of the inverter are set to a precharge potential, then charge in the capacitor is released, and power is supplied to the inverter. A switching element for supplying the precharge potential may be provided.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.13/442,113, filed Apr. 9, 2012, now allowed, which claims the benefit ofa foreign priority application filed in Japan as Serial No. 2011-088815on Apr. 13, 2011, both of which are incorporated by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a memory device including asemiconductor device and to a semiconductor integrated circuit, such asa signal processing circuit, including the memory device.

2. Description of the Related Art

Until now, a transistor including amorphous silicon, polysilicon, ormicrocrystalline silicon has been used for a display device such as aliquid crystal display. A technique in which such a transistor isutilized for a semiconductor integrated circuit has been proposed (e.g.,see Patent Document 1).

In recent years, a metal oxide having semiconductor characteristics,which is called an oxide semiconductor, has attracted attention as anovel semiconductor material having high mobility as in the case ofpolysilicon or microcrystalline silicon and having uniform elementcharacteristics as in the case of amorphous silicon.

A metal oxide is used for various applications. For example, indiumoxide is a well-known metal oxide and used as a material of atransparent electrode included in a liquid crystal display device or thelike. Examples of the metal oxide having semiconductor characteristicsinclude tungsten oxide, tin oxide, indium oxide, and zinc oxide.Transistors in which a channel formation region is formed using such ametal oxide having semiconductor characteristics are already known (seePatent Documents 2 to 4).

REFERENCE Patent Document

-   [Patent Document 1] U.S. Pat. No. 7,772,053-   [Patent Document 2] United States Published Patent Application No.    2007/0072439-   [Patent Document 3] United States Patent Application Publication No.    2011/0193078-   [Patent Document 4] United States Patent Application Publication No.    2011/0176357

SUMMARY OF THE INVENTION

A signal processing circuit such as a central processing unit (CPU) hasa variety of configurations depending on its application but isgenerally provided with various semiconductor memory devices(hereinafter simply referred to as memory devices) such as a registerand a cache memory as well as a main memory for storing data or aprogram. A register has a function of temporarily holding data forcarrying out arithmetic processing, holding a program execution state,or the like. In addition, a cache memory is provided in a CPU so as tobe located between an arithmetic unit and a main memory in order toreduce low-speed access to the main memory and speed up the arithmeticprocessing.

In a memory device such as a register or a cache memory, writing of dataneeds to be performed at higher speed than in a main memory. Therefore,in general, a flip-flop is used as a register and an SRAM or the like isused as a cache memory.

In FIG. 2A, a memory element which constitutes a register isillustrated. A memory element 200 illustrated in FIG. 2A includes aninverter 201, an inverter 202, a switching element 203, and a switchingelement 204. Input of a signal IN to an input terminal of the inverter201 is controlled by the switching element 203. A potential of an outputterminal of the inverter 201 is supplied to a circuit of a subsequentstage as a signal OUT. The output terminal of the inverter 201 isconnected to an input terminal of the inverter 202, and an outputterminal of the inverter 202 is connected to the input terminal of theinverter 201 via the switching element 204.

When the switching element 203 is turned off and the switching element204 is turned on, a potential of the signal IN which is input via theswitching element 203 is held in the memory element 200.

FIG. 2B illustrates another memory element as an example. A memoryelement 220 illustrated in FIG. 2B includes an inverter 201, an inverter202, a switching element 203, and a switching element 204. Input of asignal IN to an input terminal of the inverter 201 is controlled by theswitching element 203. An output terminal of the inverter 201 isconnected to an input terminal of the inverter 202, and an outputterminal of the inverter 202 is connected to the input terminal of theinverter 201 via the switching element 204. A potential of the outputterminal of the inverter 202 is supplied to a circuit of a subsequentstage as a signal OUT.

When the switching element 203 is turned off and the switching element204 is turned on, a potential of the signal IN which is input via theswitching element 203 is held in the memory element 220.

FIG. 2C illustrates the specific circuit configuration of the memoryelement 200 illustrated in FIG. 2A. The memory element 200 illustratedin FIG. 2C includes the inverter 201, the inverter 202, the switchingelement 203, and the switching element 204. The connection structure ofthese circuit elements is the same as that in FIG. 2A.

The inverter 201 includes a p-channel transistor 207 and an n-channeltransistor 208 whose gate electrodes are connected to each other. Inaddition, the p-channel transistor 207 and the n-channel transistor 208are connected in series between a node to which a high-level potentialVDD is supplied and a node to which a low-level potential VSS issupplied.

In a similar manner, the inverter 202 includes a p-channel transistor209 and an re-channel transistor 210 whose gate electrodes are connectedto each other. In addition, the p-channel transistor 209 and then-channel transistor 210 are connected in series between a node to whichthe high-level potential VDD is supplied and a node to which thelow-level potential VSS is supplied.

The inverter 201 illustrated in FIG. 2C operates such that one of thep-channel transistor 207 and the n-channel transistor 208 is turned onand the other is turned off according to the level of potentialssupplied to the gate electrodes thereof. Thus, current between the nodeto which the potential VDD is supplied and the node to which thepotential VSS is supplied should be ideally zero.

However, actually a minute amount of off-state current flows in theoff-state transistor; therefore, the current between the nodes can notbe zero. A similar phenomenon also occurs in the inverter 202.Therefore, power is consumed in the memory element 200 even in a statewhere data is just being held.

In the case of an inverter manufactured using bulk silicon, although itdepends on the size of a transistor, an off-state current of about 0.1pA is generated at room temperature at a voltage between the nodes ofabout 1 V, for example. The memory element illustrated in FIGS. 2A to 2Cincludes two inverters: the inverter 201 and the inverter 202;therefore, an off-state current of about 0.2 pA is generated. In thecase of a register including about 10⁷ memory elements, the off-statecurrent in the whole register is 2 mA.

Further, as miniaturization proceeds, the thickness of a gate insulatoralso becomes small, so that gate current (gate leakage current) flowingbetween a gate and a channel through the gate insulator becomes toolarge to ignore.

In addition, there has been an attempt to reduce the threshold voltageof a transistor in order to compensate a decrease in speed due to adecrease in power supply voltage; as a result, off-state current perinverter is increased by approximately three orders in magnitude in somecases.

According to the above, the power consumption of the register isincreased against a decrease in a line width of a circuit. Furthermore,heat generated by consuming power causes an increase in temperature ofthe IC chip, and then power consumption is further increased, whichresults in a vicious circle

Like the register, an SRAM also includes an inverter, and thus power isconsumed due to the off-state current of a transistor. As describedabove, as in the case of the register, power is consumed in a cachememory including the SRAM even in a state where writing of data is notperformed.

In order to suppress power consumption, a method for temporarilystopping the supply of a potential to a memory device in a period duringwhich data is not input and output has been suggested. A volatile memorydevice in which data is erased when the supply of a potential is stoppedis used for a register and a cache memory. Therefore, in the method, anonvolatile memory device is provided around the volatile memory deviceand the data is temporarily transferred to the nonvolatile memorydevice. However, since such a nonvolatile memory device is mainly formedusing a magnetic element or a ferroelectric, the manufacturing processis complex.

In addition, in the case where the power supply is stopped for a longtime in a CPU, data in a memory device is transferred to an externalmemory device such as a hard disk or a flash memory before the powersupply is stopped, so that the data can be prevented from being erased.However, it takes time to place the data back in a register, a cachememory, and a main memory from such an external memory device.Therefore, back up of data using the external memory device such as ahard disk or a flash memory is not suitable for the case where the powersupply is stopped for a short time (e.g., for 100 microseconds to oneminute) for reducing power consumption.

In view of the above-described problems, it is an object of oneembodiment of the present invention to provide a memory device and asignal processing circuit for which a complex manufacturing process isnot necessary and whose power consumption can be suppressed and a methodfor driving the memory device, and a method for driving the signalprocessing circuit. In particular, it is an object to provide a memorydevice and a signal processing circuit whose power consumption can besuppressed by stopping the power supply for a short time and a methodfor driving the memory device, and a method for driving the signalprocessing circuit.

In a memory element including a logic element by which the phase of aninput signal is inverted and the signal is output (hereinafter, thelogic element is referred to as a phase-inversion element) such as aninverter or a clocked inverter, a capacitor which holds data and acapacitor switching element which controls storing and releasing ofelectric charge in the capacitor are provided.

As the capacitor switching element, a transistor in which one or more ofamorphous silicon, polysilicon, microcrystalline silicon, and a compoundsemiconductor (preferably wide bandgap compound semiconductor) such asan oxide semiconductor is included in a channel formation region isused. The above memory element is used for a memory device such as aregister, a cache memory, or a main memory in a signal processingcircuit. The capacitor switching element is preferably formed above thephase-inversion element and overlaps therewith.

Note that the “wide bandgap compound semiconductor” in thisspecification refers to a compound semiconductor having a bandgapgreater than or equal to 2 eV. Examples of the wide bandgap compoundsemiconductor other than an oxide semiconductor include sulfide such aszinc sulfide, and nitride such as gallium nitride. In either case, it ispreferable that the donor or acceptor concentration be extremely low byhigh purification.

Further, the capacitor is also preferably formed above thephase-inversion element and overlaps therewith, and may be formed in thesame layer as the capacitor switching element or in a different layerfrom the capacitor switching element. When the capacitor is formed inthe same layer as the capacitor switching element, although it isnecessary to form a region for the capacitor switching element and aregion for the capacitor, the manufacturing process can be simplified.On the other hand, when the capacitor is formed in a different layerfrom the capacitor switching element, although the number of steps formanufacturing the capacitor is increased, there are advantages that theintegration degree is increased, an area used for the capacitor isincreased, and the like. Thus, a dielectric of the capacitor can beformed using a different component from a gate insulator of thecapacitor switching element; as a result, capacitance can be increased.

The on-state resistance of the capacitor switching element and thecapacitance of the capacitor may be determined in accordance with speedof switching operation. The time less than or equal to 100 microsecondsis enough for switching operation with the purpose of power down orpower return. The time for switching operation may be greater than orequal to 100 milliseconds depending on the intended use. The off-stateresistance of the capacitor switching element and the capacitance of thecapacitor may be determined depending on intervals of switchingoperations needed.

Further, the signal processing circuit includes various logic circuitssuch as an arithmetic circuit which transmits/receives data to/from thememory device in addition to the above memory device. Not only thesupply of power supply voltage to the memory device but also the supplyof power supply voltage to the arithmetic circuit whichtransmits/receives data to/from the memory device may be stopped.

According to one embodiment of the present invention, a memory elementat least includes two phase-inversion elements (first and secondphase-inversion elements), a capacitor, and a capacitor switchingelement which controls storing and releasing of electric charge in thecapacitor. A signal including data that is input to the memory element(an input signal) is input to an input terminal of the firstphase-inversion element. An output terminal of the first phase-inversionelement is connected to an input terminal of the second phase-inversionelement. An output terminal of the second phase-inversion element isconnected to the input terminal of the first phase-inversion element. Apotential of the output terminal of the first phase-inversion element orthe input terminal of the second phase-inversion element is output to amemory element or another circuit of a subsequent stage as an outputsignal. Alternatively, a potential of the output terminal of the secondphase-inversion element is output to a memory element or another circuitof a subsequent stage as an output signal.

Each of the phase-inversion elements has a structure in which at leastone p-channel transistor and at least one n-channel transistor whosegate electrodes are connected to each other are connected in seriesbetween a first node and a second node.

In order to store data of a signal as needed, which is input to thememory element, the capacitor is connected to a node to which apotential of the signal is supplied, via the capacitor switchingelement.

In the state where a power supply voltage is applied between the firstnode and the second node, when the signal including the data is input tothe input terminal of the first phase-inversion element, the data isheld by the first phase-inversion element and the second phase-inversionelement. In the case where the application of the power supply voltagebetween the first node and the second node is stopped, before theapplication of the power supply voltage is stopped, the capacitorswitching element is turned on and the data of the signal is stored inthe capacitor. With the above-described structure, even when theapplication of the power supply voltage to the phase-inversion elementsis stopped, data can be held in the memory element.

A channel formation region of a transistor which is used as thecapacitor switching element may include one or more of amorphoussilicon, polysilicon, microcrystalline silicon, and a compoundsemiconductor (e.g., a highly purified oxide semiconductor).

A transistor including a highly purified oxide semiconductor has thecharacteristic of extremely high off-state resistance. Therefore, chargecan be held in a capacitor for a sufficiently long period of time. Evenin the case of using a transistor including a semiconductor that is notan oxide semiconductor, needed off-state resistance can be obtained bymaking the channel length sufficiently large and the channel widthsufficiently small.

In order to return data to the phase-inversion elements, first, inputterminals and output terminals of two phase-inversion elements in thememory element are each set to an appropriate potential (prechargepotential). The precharge potential is determined considering thecapacitance of the capacitor, the gate capacitance of the capacitorswitching element, parasitic capacitance caused by these elements, andthe like.

The precharge potential may be a high-level potential (e.g., VDD), alow-level potential (e.g., VSS), or an intermediate potentialtherebetween. As an example, the precharge potential may be set to anearly middle potential of the high-level potential and the low-levelpotential. In other words, the precharge potential is set so that adifference between the precharge potential and the average of thehigh-level potential and the low-level potential is smaller than ⅕(preferably smaller than 1/10) of a difference between the high-levelpotential and the low-level potential.

For example, when the high-level potential is +1 V and the low-levelpotential is 0 V, the average is +0.5 V. The value of ⅕ of a differencebetween the high-level potential and the low-level potential is 0.2 V,and the value of 1/10 of the difference is 0.1 V. Accordingly, theprecharge potential is higher than +0.3 V and lower than +0.7 V,preferably higher than +0.4 V and lower than +0.6V.

As another example, when the high-level potential is +1 V and thelow-level potential is −1 V, the average is 0 V, the value of ⅕ of adifference between the high-level potential and the low-level potentialis 0.4 V, and the value of 1/10 of the difference is 0.2V. Accordingly,the precharge potential is higher than −0.4 V and lower than +0.4 V,preferably higher than −0.2 V and lower than +0.2 V.

Then, the capacitor switching element is turned on so that charge in thecapacitor is released to a circuit of a phase-inversion element. As aresult, the potential of an input terminal of the phase-inversionelement which is connected to the capacitor switching element varies inaccordance with charge in the capacitor. On the other hand, thepotential of an input terminal of the phase-inversion element which isnot connected to the capacitor switching element hardly varies.

After that, when power is supplied to the phase-inversion elements, apotential corresponding to the potential of the input terminal of one ofthe phase-inversion elements is input to the other of thephase-inversion elements, and a potential corresponding to the potentialof the input terminal of the other of the phase-inversion elements isinput to the one of the phase-inversion elements. The potential of theinput terminal of the phase-inversion element which is high when thecapacitor switching element is turned on is further increased, and thepotential of the input terminal of the phase-inversion element which islow when the capacitor switching element is turned on is furtherdecreased. Finally, the potentials of the input terminals are stabilizedat a high-level potential and a low-level potential, respectively. Thisstate is the same as the state of the phase-inversion element before thepower supply is stopped. That is, data can be restored.

In order to execute the above operation, a circuit for generating theprecharge potential and a unit or circuit for supplying the prechargepotential to the memory element may be provided in addition to thememory element. In the case of providing the unit or circuit forsupplying the precharge potential to the memory element, a switchingelement is preferably provided in the memory element, for example.

Further, a circuit(s) for supplying potentials to the phase-inversionelement is required to supply not only two power supply potentials (VDDand VSS) but also the precharge potential, that is, the circuit(s) needsto supply three or more levels of potential. Therefore, it is preferablethat the circuit(s) for supplying potential to the phase-inversionelement can supply a variable potential. These potentials may besupplied from the outside.

Note that in a transistor used in the phase-inversion elements, asemiconductor other than an oxide semiconductor, for example, anamorphous, microcrystalline, polycrystalline, or single crystalsemiconductor can be used. As a material of such a semiconductor,silicon, gallium arsenide, gallium phosphide, germanium, or the like canbe given. The transistor may be manufactured with use of a thinsemiconductor film or a bulk semiconductor wafer.

As an oxide semiconductor, an In—Sn—Ga—Zn-based oxide semiconductorwhich is a four-component metal oxide; an In—Ga—Zn-based oxidesemiconductor, an In—Sn—Zn-based oxide semiconductor, an In—Al—Zn-basedoxide semiconductor, a Sn—Ga—Zn-based oxide semiconductor, anAl—Ga—Zn-based oxide semiconductor, or a Sn—Al—Zn-based oxidesemiconductor which are three-component metal oxides; an In—Zn-basedoxide semiconductor, a Sn—Zn-based oxide semiconductor, an Al—Zn-basedoxide semiconductor, a Zn—Mg-based oxide semiconductor, a Sn—Mg-basedoxide semiconductor, an In—Mg-based oxide semiconductor; or anIn—Ga-based oxide semiconductor which are two-component metal oxides; oran In-based oxide semiconductor, a Sn-based oxide semiconductor, or aZn-based oxide semiconductor which are single-component metal oxides canbe used.

In this specification, for example, the term “In—Sn—Ga—Zn-based oxidesemiconductor” means a metal oxide containing indium (In), tin (Sn),gallium (Ga), and zinc (Zn) and may have any stoichiometric ratio. Theabove oxide semiconductor may contain silicon, sulfur, nitrogen, or thelike.

Alternatively, oxide semiconductors which can be represented by thechemical formula, InMO₃(ZnO)_(m) (m>0) can be used. Here, M denotes oneor more metal elements selected from Ga, Al, Mn, and Co.

The oxide semiconductor is metal oxide having a relatively high mobility(greater than or equal to 1 cm²/Vs, preferably greater than or equal to10 cm²/Vs) as a semiconductor characteristic. In addition, an oxidesemiconductor which is highly purified (a purified OS) by reduction ofan impurity serving as an electron donor (donor), such as moisture orhydrogen, is an i-type semiconductor (intrinsic semiconductor; in thisspecification, a semiconductor having a carrier concentration of1×10¹²/cm³ or lower is called i-type semiconductor) or a semiconductorextremely close to an i-type semiconductor (a substantially i-typesemiconductor).

Specifically, impurities such as moisture or hydrogen included in theoxide semiconductor are removed so that the value of the hydrogenconcentration in the oxide semiconductor measured by secondary ion massspectrometry (SIMS) can be less than or equal to 5×10¹⁹/cm³, preferablyless than or equal to 5×10¹⁸/cm³, further preferably less than or equalto 5×10¹⁷/cm³, still further preferably less than or equal to1×10¹⁶/cm³.

With the above-described structure, the carrier density of an oxidesemiconductor film, which can be measured by Hall effect measurement,can be less than 1×10¹⁴/cm³, preferably less than 1×10¹²/cm³, furtherpreferably less than 1×10¹¹/cm³ that is a value less than or equal tomeasurement limit. That is, the carrier density of the oxidesemiconductor film can be extremely close to zero.

Further, the bandgap of the used oxide semiconductor is greater than orequal to 2 eV and less than or equal to 4 eV, preferably greater than orequal to 2.5 eV and less than or equal to 4 eV, further preferablygreater than or equal to 3 eV and less than or equal to 4 eV. By using ahighly purified oxide semiconductor film with the wide bandgap asdescribed and sufficiently reduced concentration of impurities such asmoisture or hydrogen, the off-state current of the transistor can bereduced.

The analysis of the concentrations of hydrogen in the oxidesemiconductor film and a conductive film is described here. Measurementsof the hydrogen concentration in the oxide semiconductor film and thehydrogen concentration in the conductive film are performed by SIMS. Itis known that it is difficult to obtain accurate data in the proximityof a surface of a sample or in the proximity of an interface betweenstacked films formed using different materials, by the SIMS inprinciple.

Thus, in the case where distribution of the hydrogen concentrations inthe film in a thickness direction is analyzed by SIMS, an average valuein a region of the film in which the value is not greatly changed andsubstantially the same value can be obtained is employed as the hydrogenconcentration.

Further, in the case where the thickness of the film is small, a regionwhere substantially the same value can be obtained cannot be found insome cases due to the influence of the hydrogen concentration in anadjacent film. In that case, the maximum value or the minimum value ofthe hydrogen concentration in the region of the film is employed as thehydrogen concentration of the film. Furthermore, in the case where amountain-shaped peak having a maximum value or a valley-shaped peakhaving a minimum value do not exist in the region of the film, the valueat an inflection point is employed as the hydrogen concentration.

Note that it has been found that the oxide semiconductor film formed bysputtering or the like includes a large amount of impurities such asmoisture or hydrogen. Moisture and hydrogen easily form a donor leveland thus serve as impurities in the oxide semiconductor.

Therefore, in one embodiment of the present invention, in order toreduce impurities such as moisture or hydrogen in the oxidesemiconductor film, the oxide semiconductor film is subjected to heattreatment in a reduced pressure atmosphere, an atmosphere of an inertgas such as nitrogen or a rare gas, an oxygen gas atmosphere, or anultra dry air atmosphere (the moisture amount is less than or equal to20 ppm (−55° C. by conversion into a dew point), preferably less than orequal to 1 ppm, further preferably less than or equal to 10 ppb, in thecase where measurement is performed with use of a dew point meter of acavity ring down laser spectroscopy (CRDS) system).

The heat treatment is preferably performed at a temperature higher thanor equal to 300° C. and lower than or equal to 850° C., furtherpreferably higher than or equal to 550° C. and lower than or equal to750° C. Note that this heat treatment is performed at a temperature notexceeding the allowable temperature limit of the substrate to be used.An effect of elimination of moisture or hydrogen by the heat treatmenthas been confirmed by thermal desorption spectrometry (TDS).

A furnace or a rapid thermal annealing method (RTA method) is used forthe heat treatment. As the RTA method, a method using a lamp lightsource or a method in which heat treatment is performed for a short timewhile a substrate is moved in a heated gas can be employed. By the useof the RTA method, it is also possible to make the time necessary forheat treatment shorter than 0.1 hours.

Specifically, the transistor including the oxide semiconductor film thatis highly purified by the above heat treatment as an active layer has anextremely small amount of off-state current (extremely highoff-resistance). Specifically, even when an element has a channel width(W) of 1×10⁶ μm and a channel length (L) of 1 μm, the off-state current(drain current when the voltage between a gate electrode and a sourceelectrode is lower than or equal to 0 V) at a drain voltage (voltagebetween the source electrode and the drain electrode) of 1 V can belower than or equal to the measurement limit of a semiconductorparameter analyzer, i.e., less than or equal to 1×10⁻¹³ A.

In that case, off-state current density (off-state current per channelwidth of 1 micrometer) is less than or equal to 100 zA/μm. Accordingly,the transistor including the highly purified oxide semiconductor film asan active layer has far lower off-state current than a transistorincluding silicon having crystallinity.

On the other hand, the off-state current density of a transistorincluding a thin silicon film can be approximately 100 zA/μm byextremely reducing the silicon film in thickness (see Patent Document1). Further, sufficiently low off-state current can be obtained bymaking the transistor to have a long and narrow channel.

By using the transistor having the above structure as a capacitorswitching element for controlling release of electric charge stored inthe capacitor, leakage of electric charge from the capacitor can beprevented; therefore, even without application of power supply voltage,data is not erased but can be held.

In a period during which data is held in the capacitor, the power supplyvoltage is not necessarily applied to the phase-inversion elements; as aresult, surplus power consumption due to the off-state current oftransistors used for the phase-inversion elements can be reduced, andthe power consumption of the memory device and further the signalprocessing circuit including the memory device can be suppressed to below.

Note that the off-state current of the capacitor switching element isdetermined depending on the capacitance of the capacitor and a periodduring which data is held. For example, when a transistor having anoff-state current of 1 zA or lower at a drain voltage of 1 V is used asa capacitor switching element and the capacitance of the capacitor isset to 1 fF, data can be held for one or more days.

On the other hand, such a long period of time is not always required forholding data. For example, in the case where it is only necessary tohold data for one second, when the capacitance of the capacitor is 1 fF,the off-state current may be 0.1 fA or lower.

For example, although use of amorphous silicon, polysilicon,microcrystalline silicon, or the like cannot allow achievement of a lowoff-state current of 1 zA or lower, unlike use of the highly purifiedoxide semiconductor, a low off-state current of 0.1 fA or lower can beachieved by forming a long and narrow channel or reducing in thickens ofa semiconductor layer as described in Patent Document 1.

Note that the off-state current is proportional to the mobility of thesemiconductor, so that the lower the mobility becomes, the lower theoff-state current becomes. Therefore, a transistor including amorphoussilicon has a lower off-state current than a transistor includingpolysilicon. A transistor including a semiconductor having a lowmobility has inferior switching characteristics, but suchcharacteristics hardly adversely affect one embodiment of the presentinvention. Description thereof will be made later.

By applying the memory element having the above structure to a memorydevice such as a register or a cache memory included in a signalprocessing circuit, data in the memory device can be prevented frombeing erased owing to the stop of the power supply. Further, data can besurely restored by resumption of power supply.

Therefore, the power supply can be stopped even for a short time in thesignal processing circuit or one or a plurality of logic circuitsincluded in the signal processing circuit. Accordingly, it is possibleto provide a signal processing circuit whose power consumption can besuppressed and a method for driving the signal processing circuit whosepower consumption can be suppressed.

Note that when a transistor including a semiconductor which is notsingle crystal is used, the semiconductor in this transistor has a lowermobility than single crystal silicon, so that there is a concern thatsufficient switching performance cannot be obtained. However, operationsuch as power down or power return may be slow as compared with theclock speed in the logic circuit. In other words, 100 microseconds orshorter may be sufficient for switching, and 1 millisecond or longer insome situations.

This is because a process in which data held in a flip flop circuit ineach memory element is transferred to the capacitor or a process inwhich data held in the capacitor is transferred to a flip flop circuitin each memory element can be conducted simultaneously in all memoryelements. Such a low-speed operation causes no defect in a transistorwith a long and narrow channel. The mobility may be 1 cm²/Vs or higher.

In general, relation between on-state current I_(on), off-state currentI_(off), time τ_(on) needed for switching, and time τ_(off) needed forholding data is represented by the following formula.

${{\tau_{off}/{\left. \tau_{on} \right.\sim I_{on}}}/I_{off}} \times \frac{1}{100}$

Thus, when the on-state current I_(on) is 10⁸ times as large as theoff-state current I_(off), τ_(off) is approximately 10⁶ times as largeas τ_(on). For example, in the case where a time necessary for thecapacitor switching element to inject electric charge to the capacitoris one microsecond, the capacitor and the capacitor switching elementcan hold data for one second. If a period during which data is held islonger than one second, an operation in which the held data is returnedto a flip-flop circuit or the like, amplified, and then captured in thecapacitor (this operation is called “refresh”) may be repeated everysecond.

Further, in the capacitor, as the capacitance is high, an error at thetime of returning data to the flip-flop circuit is less likely to occur.In contrast, when the capacitance is high, the response speed of acircuit including the capacitor and the capacitor switching element isdecreased. However, the operation of stop and resuming supply of powermay be extremely slow operation as compared with the clock speed of alogic circuit as described above. Thus, there is no problem when thecapacitance is less than or equal to 1 pF.

Note that in the case of increasing capacitance as in a DRAM, generally,it is difficult to form a capacitor. However, according to oneembodiment of the present invention, a planar capacitor may be employed.

For example, the above circuit such as a register or an SRAM includes acircuit in which two phase-inversion elements (such as inverters) arecombined (e.g., flip-flop circuit). The area occupied by the circuit inwhich two inverters are combined is 50 F² (F is the minimum featuresize) or more, and generally 100 F² to 150 F².

Furthermore, when a transistor having a long and narrow channel or ahighly purified oxide semiconductor is used as a transistor used for thecapacitor switching element, the off-state current of the transistor canbe reduced, and influence of the parasitic capacitance formed by wiringscan be small. Thus, the capacitance of the capacitor may be much lowerthan that (about 30 fF) used in a DRAM. Since a capacitor which issmaller than that of DRAM is formed in a region which is larger than thearea of DRAM as described above, the capacitor may be a planar capacitorwhich does not need a special manufacturing method.

Note that when electric charge is drastically transferred from thephase-inversion element to the capacitor, stability of thephase-inversion elements is decreased and accordingly data stored in thephase-inversion element may be corrupted. In such a case, wrong data isheld in the capacitor.

In order to prevent the above problem, the on-state current of thecapacitor switching element may be reduced to some extent. A transistorwith a long and narrow channel or a transistor with a mobility of 10cm²/Vs or lower, as described above, is suitable for this purpose.

According to one embodiment of the present invention, data can betransferred and held in the capacitor, and supplying power of thephase-inversion element can be stopped. Thus, the threshold value of atransistor used for the phase-inversion element in the memory elementmay be reduced. That is, a memory element which operates at high speedand consumes less power can be obtained.

BRIEF DESCRIPTION OF THE DRAWINGS

In the accompanying drawings:

FIGS. 1A and 1B are circuit diagrams of a memory element;

FIGS. 2A to 2C are circuit diagrams of conventional memory elements;

FIGS. 3A and 3B are circuit diagrams of a memory element;

FIGS. 4A and 4B are circuit diagrams of a memory element;

FIGS. 5A and 5B are circuit diagrams of a memory element;

FIGS. 6A and 6B are circuit diagrams of a memory element;

FIGS. 7A to 7D are top views illustrating a structure of a memoryelement;

FIGS. 8A and 8B are cross-sectional views illustrating a structure of amemory element;

FIGS. 9A and 9B are circuit diagrams of memory elements;

FIGS. 10A to 10C are diagrams illustrating operation examples of amemory element;

FIGS. 11A to 11C are diagrams illustrating operation examples of amemory element;

FIGS. 12A and 12B are a circuit diagram and a cross-sectional view of amemory element;

FIGS. 13A to 13C are diagrams illustrating operation examples of amemory element;

FIGS. 14A to 14D are diagrams illustrating operation examples of amemory element; and

FIG. 15A is a block diagram of a signal processing circuit including amemory device and FIG. 15B is a block diagram of a CPU.

DETAILED DESCRIPTION OF THE INVENTION

Hereinafter, embodiments of the present invention will be described indetail with reference to the accompanying drawings. Note that thepresent invention is not limited to the description below, and it iseasily understood by those skilled in the art that a variety of changesand modifications can be made without departing from the spirit andscope of the present invention. Accordingly, the present inventionshould not be construed as being limited to the description of theembodiments below.

Note that “connection” in this specification means electrical connectionand corresponds to the state in which current, voltage, or potential canbe supplied, applied, or conducted. Therefore, a state of electricalconnection means not only a state of direct connection but also a stateof indirect connection through a circuit element such as a wiring, or aresistor, in which current, voltage, or a potential can be supplied ortransmitted.

Note also that even when a circuit diagram shows independent componentsas if they are connected to each other, there is a case in which oneconductive film has functions of a plurality of components such as acase in which part of a wiring also functions as an electrode. The term“connection” also means such a case where one conductive film hasfunctions of a plurality of components.

The names of the “source electrode” and the “drain electrode” includedin the transistor interchange with each other depending on the polarityof the transistor or the levels of potentials applied to the respectiveelectrodes. In general, in an n-channel transistor, an electrode towhich a lower potential is applied is called a source electrode, and anelectrode to which a higher potential is applied is called a drainelectrode. Further, in a p-channel transistor, an electrode to which alower potential is supplied is called a drain electrode, and anelectrode to which a higher potential is supplied is called a sourceelectrode.

In this specification, although connection relation of the transistor isdescribed assuming that the source electrode and the drain electrode arefixed in some cases for convenience, actually, the names of the sourceelectrode and the drain electrode interchange with each other dependingon the relation of the potentials.

Note that in this specification, the state in which the transistors areconnected to each other in series means the state in which only one of asource electrode and a drain electrode of a first transistor isconnected to only one of a source electrode and a drain electrode of asecond transistor. In addition, the state in which the transistors areconnected to each other in parallel means the state in which one of asource electrode and a drain electrode of a first transistor isconnected to one of a source electrode and a drain electrode of a secondtransistor and the other of the source electrode and the drain electrodeof the first transistor is connected to the other of the sourceelectrode and the drain electrode of the second transistor.

A signal processing circuit of the present invention includes, but isnot limited to, in its category an integrated circuit such as a largescale integrated circuit (LSI) including a microprocessor, an imageprocessing circuit, a digital signal processor (DSP), or amicrocontroller.

Embodiment 1

A memory device which is one embodiment of the present inventionincludes one or a plurality of memory elements capable of storing 1-bitdata. In FIG. 1A, an example of a circuit diagram of a memory elementincluded in a memory device of the present invention is illustrated. Amemory element 100 illustrated in FIG. 1A at least includes a firstphase-inversion element 101 and a second phase-inversion element 102 bywhich the phase of an input signal is inverted and the signal is output,a switching element 103, a switching element 104, a capacitor 105, and acapacitor switching element 106.

A signal IN including data that is input to the memory element 100 issupplied to an input terminal of the first phase-inversion element 101via the switching element 103. An output terminal of the firstphase-inversion element 101 is connected to an input terminal of thesecond phase-inversion element 102. An output terminal of the secondphase-inversion element 102 is connected to the input terminal of thefirst phase-inversion element 101 via the switching element 104. Thepotential of the output terminal of the first phase-inversion element101 or the potential of the input terminal of the second phase-inversionelement 102 is output to a memory element of a subsequent stage, andfinally output as a signal OUT.

Note that in FIG. 1A, an example in which inverters are used as thefirst phase-inversion element 101 and the second phase-inversion element102 is illustrated; however, a clocked inverter can also be used as thefirst phase-inversion element 101 or the second phase-inversion element102 besides the inverter.

The capacitor 105 is connected to an input terminal of the memoryelement 100, i.e., a node to which a potential of the signal IN issupplied, via the switching element 103 and the capacitor switchingelement 106 so that the data of the signal IN that is input to thememory element 100 can be stored as needed. Specifically, the capacitor105 includes a dielectric between a pair of electrodes. One of theelectrodes is connected to the input terminal of the firstphase-inversion element 101 via the capacitor switching element 106. Theother of the electrodes is connected to a node to which a potential VEsuch as a ground potential is supplied.

For the capacitor switching element 106, a transistor including a highlypurified oxide semiconductor in a channel formation region is used.

Note that the memory element 100 may further include another circuitelement such as a diode, a resistor, an inductor, or a capacitor, asneeded.

Next, an example of a more specific circuit diagram of the memoryelement of FIG. 1A is illustrated in FIG. 1B. The memory element 100illustrated in FIG. 1B includes the first phase-inversion element 101,the second phase-inversion element 102, the switching element 103, theswitching element 104, the capacitor 105, and the capacitor switchingelement 106. The connection structure of these circuit elements are thesame as that in FIG. 1A.

The first phase-inversion element 101 in FIG. 1B has a structure inwhich a p-channel transistor 107 and an n-channel transistor 108 whosegate electrodes are connected to each other are connected in seriesbetween a first node to which a potential VH including a high-levelpotential VDD is supplied and a second node to which a potential VLincluding a low-level potential VSS is supplied.

Note that in the following embodiments, a node to which potential VHincluding high-level potential VDD is supplied is referred to as firstnode, and a node to which potential VL including low-level potential VSSis applied is referred to as second node. In addition, a wiring havingthe first node is referred to as VH wiring, and a wiring having thesecond node is referred to as VL wiring.

Specifically, a source electrode of the p-channel transistor 107 isconnected to the first node, and a source electrode of the n-channeltransistor 108 is connected to the second node. In addition, a drainelectrode of the p-channel transistor 107 is connected to a drainelectrode of the n-channel transistor 108, and potentials of these twodrain electrodes can be regarded as a potential of the output terminalof the first phase-inversion element 101. In addition, potentials of thegate electrode of the p-channel transistor 107 and the gate electrode ofthe re-channel transistor 108 can be regarded as a potential of theinput terminal of the first phase-inversion element 101.

Note that in the memory device of this embodiment, the potential VH isnot a fixed potential, which can also be the precharge potential and thepotential VDD at least. Similarly, the low-level potential VL is not afixed potential, which can also be the precharge potential and thepotential VSS at least. Therefore, when operation mode of the memorydevice is changed, the potential VH is also changed in some cases.

The second phase-inversion element 102 in FIG. 1B has a structure inwhich a p-channel transistor 109 and an n-channel transistor 110 whosegate electrodes are connected to each other are connected in seriesbetween the first node and the second node. Specifically, a sourceelectrode of the p-channel transistor 109 is connected to the firstnode, and a source electrode of the n-channel transistor 110 isconnected to the second node.

In addition, a drain electrode of the p-channel transistor 109 isconnected to a drain electrode of the n-channel transistor 110, andpotentials of these two drain electrodes can be regarded as a potentialof the output terminal of the second phase-inversion element 102. Inaddition, potentials of the gate electrode of the p-channel transistor109 and the gate electrode of the n-channel transistor 110 can beregarded as a potential of the input terminal of the secondphase-inversion element 102.

In FIG. 1B, the case where one transistor is used for the switchingelement 103 is illustrated as an example, and the switching of thetransistor is controlled by a signal Sig. 1 supplied to a gate electrodethereof. In addition, the case where one transistor is used for theswitching element 104 is illustrated as an example, and the switching ofthe transistor is controlled by a signal Sig. 2 supplied to a gateelectrode thereof.

Note that in FIG. 1B, a structure in which each of the switching element103 and the switching element 104 includes only one transistor isillustrated; however, the present invention is not limited to thisstructure. In one embodiment of the present invention, the switchingelement 103 or the switching element 104 may include a plurality oftransistors.

In the case where a plurality of transistors which serve as switchingelements are included in the switching element 103 or the switchingelement 104, the plurality of transistors may be connected to each otherin parallel, in series, or in combination of parallel connection andseries connection.

In the case where a plurality of transistors is connected in parallel,polarity thereof may be different. For example, a so-called transfergate structure in which an n-channel transistor and a p-channeltransistor are connected in parallel may be employed.

In FIG. 1B, a transistor including an oxide semiconductor in a channelformation region is used for the capacitor switching element 106, andthe switching of the transistor is controlled by a signal Sig. 3supplied to a gate electrode thereof. Since the transistor used for thecapacitor switching element 106 includes a highly purified oxidesemiconductor in a channel formation region, the amount of off-statecurrent thereof is extremely small as described above.

In FIG. 1B, a structure in which the capacitor switching element 106includes only one transistor is illustrated; however, the presentinvention is not limited to this structure. In one embodiment of thepresent invention, the capacitor switching element 106 may include aplurality of transistors. In the case where a plurality of transistorswhich serve as switching elements are included in the capacitorswitching element 106, the plurality of transistors may be connected toeach other in parallel, in series, or in combination of parallelconnection and series connection.

In one embodiment of the present invention, at least a transistor usedfor a switching element in the capacitor switching element 106 mayinclude a highly purified oxide semiconductor in a channel formationregion.

On the other hand, each of the transistors used for the firstphase-inversion element 101, the second phase-inversion element 102, theswitching element 103, and the switching element 104 can include asemiconductor other than an oxide semiconductor, e.g., an amorphous,microcrystalline, polycrystalline, or single crystal semiconductor canbe used. As such a material of a semiconductor, silicon, germanium,gallium arsenide, gallium phosphide, indium phosphide, or the like canbe given. The transistor may be manufactured with use of a thinsemiconductor film or a bulk (semiconductor wafer).

A circuit arrangement of a memory element in this embodiment isdescribed with reference to FIGS. 7A to 7D. FIG. 7A illustrates a layoutof one memory element 300. The memory element 300 corresponds to thememory element 100 in FIGS. 1A and 1B. An inverter or the like which isa main component of the memory element 300 may be formed by using aknown semiconductor technique. On a semiconductor wafer, a shallowtrench isolation (STI) region for element isolation, an n-type region,and a p-type region are formed. A first layer wiring which serves as agate layer is formed thereover, and then a second layer wiring isfurther formed thereover.

A part of the first layer wiring is a Sig. 1 wiring 302 for supplying asignal Sig. 1, and another part thereof is a Sig. 2 wiring 303 forsupplying a signal Sig. 2. A part of the second layer wiring is a VHwiring 301 for supplying a potential VH, and a part thereof is an INwiring 304 for inputting a signal IN. In FIG. 7A, positions of contactholes through which wirings are connected to the upper component areshown.

Further, as illustrated in FIG. 7B, a third layer wiring is providedover the structure of FIG. 7A, and a part of the third layer wiring isconnected to a part of the second layer wiring through the contact hole,which serves as an OUT wiring 305 for outputting a signal OUT. The otherparts of the third layer wiring function as a drain electrode 306 and asource electrode 307 of a transistor as a switching element, includingan oxide semiconductor. The drain electrode 306 is connected to a partof the second layer wiring through the contact hole. The sourceelectrode 307 serves as a part of an electrode of an element formed in alater step, which corresponds to the capacitor 105 in FIGS. 1A and 1B.

Over the third layer wiring, an oxide semiconductor layer (OS layer) isformed. As illustrated in FIG. 7C, the oxide semiconductor layer has atleast one hollow portion and thus has an oxide semiconductor region 308with a J-shape, for example. Alternatively, the oxide semiconductorregion 308 may have a U-shape, an L-shape, a V-shape, or a C-shape.Further alternatively, a shape having two or more hollow portions (e.g.,an M-shape, an N-shape, an S-shape, a W-shape, a Z-shape, or the like),or a bent shape other than the above may be employed.

With the above shape, the length from one end portion to the other endportion of the oxide semiconductor region 308 can be larger than thelong side of the memory element 300. For example, given that the minimumfeature size is F, the length from one end portion to the other endportion can be 10 F or more, preferably 20 F or more, further preferably50 F or more. In a transistor (corresponding to the capacitor switchingelement 106 in FIGS. 1A and 1B) which is formed using the oxidesemiconductor region 308 with the above shape, the channel length can be10 F or more, preferably 20 F or more, further preferably 50 F or more.

In FIG. 7C, the length from one end to the other end of the oxidesemiconductor region 308 is approximately 17 F. By making the channellength large in this manner, deterioration of off-state characteristicsdue to a short-channel effect can be suppressed.

Over the oxide semiconductor layer, a fourth layer wiring is provided asillustrated in FIG. 7D. A gate wiring 309 and a capacitor wiring 310 areformed of the fourth layer wiring. A part of the gate wiring 309 servesas a gate electrode of the capacitor switching element 106 illustratedin FIGS. 1A and 1B. Note that the signal Sig. 3 is supplied to the gatewiring 309. Further, the capacitor wiring 310 partly overlaps with thesource electrode 307 to form a part of the capacitor 105 in FIGS. 1A and1B. In the case of FIG. 7D, the area of electrodes of the capacitor (anarea where two electrodes overlap with each other) is 28 F². Note thatthe potential VE is supplied to the capacitor wiring 310.

FIGS. 8A and 8B schematically illustrate a cross-sectional structure ofthe memory element 300 along dashed dotted line X-Y in FIGS. 7A to 7D.Note that in FIGS. 8A and 8B and FIGS. 7A to 7D, the same hatchingdenotes the same component.

FIG. 8A is a cross-sectional view of a structure in FIG. 7B. An STI 311,the n-type region, and the p-type region are formed on the semiconductorwafer, and the first layer wiring, and the second layer wiring areprovided, so that a circuit (e.g., the VH wiring 301 or the Sig. 1wiring 302) is formed. An interlayer insulator 312 is provided over then-type and p-type regions so that the first layer wiring and the secondlayer wiring are embedded. In the case where electrical connectionbetween the n-type, p-type regions and the first layer wiring and thesecond layer wiring is needed, a contact plug 313 is provided. Further,over the interlayer insulator 312, the drain electrode 306 and thesource electrode 307 formed of the third layer wiring are embedded in anembedding insulator 314.

FIG. 8B is a cross-sectional view of a structure in FIG. 7D. Over thestructure illustrated in FIG. 8A, an oxide semiconductor layer (such asthe oxide semiconductor region 308), a gate insulator 315, and thefourth layer wiring (the gate wiring 309 or the capacitor wiring 310)are further formed. Here, the thickness of the oxide semiconductor layeris 1 nm to 30 nm, preferably 1 nm to 10 nm, and the thickness of thegate insulator 315 is 2 nm to 30 nm, preferably 5 nm to 10 nm.

Further, as described in Patent Document 3, one or a plurality ofmaterials with a high work function may be provided in contact with theoxide semiconductor layer. With such a structure, the oxidesemiconductor layer can be depleted, which is effective in an increasein off-resistance.

In this embodiment, since quality of an oxide semiconductor layer isvalued, a highly purified oxide semiconductor (film) may be used. Amethod for manufacturing such an oxide semiconductor (film) will bedescribed in Embodiment 9.

Next, an example of operation of the memory element illustrated in FIG.1A is described. Note that the memory element can be operated by amethod other than the following description.

First, in writing data, the switching element 103 is turned on, theswitching element 104 is turned off, and the capacitor switching element106 is turned off. Then, the potential VDD is supplied to the first nodeand the potential VSS is supplied to the second node.

A potential of the signal IN supplied to the memory element 100 issupplied to the input terminal of the first phase-inversion element 101via the switching element 103, whereby the potential of the outputterminal of the first phase-inversion element 101 is a phase-invertedpotential of the signal IN. Then, the switching element 104 is turned onand the input terminal of the first phase-inversion element 101 isconnected to the output terminal of the second phase-inversion element102, whereby data is written into the first phase-inversion element 101and the second phase-inversion element 102.

Next, in the case where data is held by the first phase-inversionelement 101 and the second phase-inversion element 102, in the statewhere the switching element 104 remains in an on-state and the capacitorswitching element 106 remains in an off-state, the switching element 103is turned off. By turning off the switching element 103, the input datais held by the first phase-inversion element 101 and the secondphase-inversion element 102. At this time, the potential VDD is suppliedto the first node and the potential VSS is supplied to the second node,whereby the state in which the power supply voltage is applied betweenthe first node and the second node is maintained.

The potential of the output terminal of the first phase-inversionelement 101 reflects the data held by the first phase-inversion element101 and the second phase-inversion element 102. Therefore, by readingout the potential, the data can be read out from the memory element 100.

Note that in the case where the input data is held by the capacitor 105in order to reduce power consumption in holding the data, first, theswitching element 103 is turned off, the switching element 104 remainsin an on-state, and the capacitor switching element 106 is turned on.Then, via the capacitor switching element 106, electric charge with anamount corresponding to the value of the data held by the firstphase-inversion element 101 and the second phase-inversion element 102is stored in the capacitor 105, whereby the data is written into thecapacitor 105.

After the data is stored in the capacitor 105, the capacitor switchingelement 106 is turned off, whereby the data stored in the capacitor 105is held. After the capacitor switching element 106 is turned off, thefirst node and the second node both are set to, for example, thepotential VSS or a precharge potential described later. In particular,the first node and the second node both are preferably set to theprecharge potential, which will be described later. Note that after thedata is stored in the capacitor 105, the switching element 104 may beturned off.

In such a manner, in the case where the input data is held by thecapacitor 105, the application of the power supply voltage between thefirst node and the second node is unnecessary; therefore, the off-statecurrent flowing between the first node and the second node via thep-channel transistor 107 and the n-channel transistor 108 which areincluded in the first phase-inversion element 101, or via the p-channeltransistor 109 and the n-channel transistor 110 which are included inthe second phase-inversion element 102 can be extremely close to zero.

As a result, power consumption due to the off-state current of thememory element in holding data can be significantly reduced, andaccordingly the power consumption of the memory device and further thesignal processing circuit including the memory device can be suppressedto be low.

Since the transistor used for the capacitor switching element 106includes a highly-purified oxide semiconductor in a channel formationregion, the off-state current density can be less than or equal to 100zA/μm, preferably less than or equal to 10 zA/μm, further preferablyless than or equal to 1 zA/μm.

Moreover, in the transistor having a long and narrow channel, theoff-state current is less than or equal to 1 zA. As a result, when thecapacitor switching element 106 for which the transistor is used is off,charge stored in the capacitor 105 is hardly released; therefore, thedata is held.

Next, a method for transferring data stored in the capacitor 105 to thefirst phase-inversion element 101 and the second phase-inversion element102 (method for restoring data) will be described.

Although specific values of potentials are given below for easyunderstanding, potentials other than the given potentials can be used asappropriate. Here, the high-level potential VDD is set to +1V, thelow-level potential VSS is set to 0V, and the precharge potential is setto +0.5 V. In order to restore data, at least the following three stepsneed to be performed. Note that in the process described below in thisembodiment, the potential VE is fixed at 0 V.

<Precharge>

The potentials of the input terminals and the output terminals of thefirst phase-inversion element 101 and the second phase-inversion element102 are set to +0.5 V, that is, the precharge potential. In order that,the potentials of the first node and the second node are set to +0.5 V.

In addition, the signal IN and the signal OUT are set to the prechargepotential or a floating potential. It is preferable that potentials ofall the terminals connected to a memory device including the memoryelement 100 are set to the precharge potential, and then set to thefloating potential.

When the signal IN or the signal OUT is set to the floating potential,the switching element 103 is turned off. Note that the capacitorswitching element 106 is kept off. The switching element 104 may beeither off or on. After several milliseconds to several seconds, thepotential of the input terminal of the first phase-inversion element 101and the potential of the output terminal of the second phase-inversionelement 102 become +0.5 V.

After the data is transferred to the capacitor 105 in the above manner,the potential of the first node and the potential of the second node areset to the precharge potential; whereby changing the potentials isunnecessary here, and the following steps of discharge can be performed.

Note that just before the step of discharge, the potentials of the inputterminals of the first phase-inversion element 101 and the secondphase-inversion element 102 may reflect the potentials which have beenheld in some cases, which does not cause a practical problem.

For example, when the potentials of the input terminals of the firstphase-inversion element 101 and the second phase-inversion element 102,before the first phase-inversion element 101 and the secondphase-inversion element 102 are deactivated, are +1 V and 0 V,respectively, the potentials of the input terminals of the firstphase-inversion element 101 and the second phase-inversion element 102just before the step of discharge are +0.5 V or higher, and +0.5 V orlower, respectively. For example, the potentials of the input terminalsof the first phase-inversion element 101 and the second phase-inversionelement 102 may be +0.6 V and +0.4 V, respectively, or +0.51 V and +0.49V, respectively.

A potential difference between the precharge potential and the potentialjust before the step of discharge depends on a period of time while thefirst phase-inversion element 101 and the second phase-inversion element102 are deactivated. As the period is shorter, the potential just beforethe step of discharging becomes close to the potential before thephase-inversion element is deactivated. In any case, the potentials ofthe input terminals of the first phase-inversion element 101 and thesecond phase-inversion element 102 just before the step of discharge isin accordance with the held data, and the data does not become inversedby an influence of the following discharge.

<Discharge>

Next, the capacitor switching element 106 is turned on. As a result, thepotential of a circuit which is connected to the capacitor switchingelement 106 changes. On the other hand, the potential of the circuitwhich is not connected to the capacitor switching element 106 hardlychanges. Note that before this operation (preferably, before theprecharge), the switching element 104 is preferably turned on.

This change in potential is determined in accordance with thecapacitance of the capacitor 105, the capacitance of the circuitconnected to the capacitor switching element 106 (hereinafter referredto as parasitic capacitance, except for the capacitance of the capacitor105), the capacitance of the capacitor switching element 106, and thelike. As the capacitance of the capacitor 105 is larger than theparasitic capacitance, the change in potential becomes pronounced. Notethat in general, the parasitic capacitance with respect to the capacitor105 is not small enough to ignore, and is greater than or equal to ⅓times the capacitor.

For example, the area of the capacitor illustrated in FIGS. 7A to 7D is28 F². When F=30 nm and a 10-nm-thick silicon oxide is used as adielectric, the capacitance is approximately 0.09 fF. In this case, theparasitic capacitance is estimated to be approximately 0.1 fF. That is,the parasitic capacitance is comparable to the capacitance of thecapacitor. Further, in the case of using a transistor with a largechannel length as in FIGS. 7A to 7D as a capacitor switching element, aninfluence of the gate capacitance (in the above case, the gatecapacitance is approximately 61% of the capacitance of the capacitor)cannot be ignored.

In that case, for example, when high-level data is stored in thecapacitor 105 (i.e., a potential of +1 V is stored), the potential of agate of the capacitor switching element 106 is set to +2 V and thecapacitor switching element 106 is turned on so that charge stored inthe capacitor 105 is released to the first phase-inversion element 101;as a result, the potential of the circuit connected to the capacitorswitching element 106 becomes approximately +1.02 V. This is greatlyinfluenced by a potential of +2 V applied to the gate of the capacitorswitching element 106.

Even when low-level data is stored in the capacitor 105 (i.e., apotential of 0 V is stored), the capacitor switching element 106 isturned on so that charge stored in the capacitor 105 is released to thefirst phase-inversion element 101; as a result, the potential of acircuit connected to the capacitor switching element 106 becomesapproximately +0.65 V, which is higher than the precharge potential.This is also greatly influenced by a potential of +2 V applied to thegate of the capacitor switching element 106.

When the gate capacitance of the capacitor switching element 106 is toolarge to ignore (specifically in the case where the gate capacitance ofthe capacitor switching element 106 is greater than or equal to 30% ofthe capacitance of the capacitor 105) as described above, the potentialof the gate of the capacitor switching element 106 serves a disturbingfactor; therefore, the capacitor switching element 106 is preferablyturned off after the discharge. Further, the gate capacitance of thecapacitor switching element 106 is preferably less than or equal totwice the capacitance of the capacitor 105.

The influence of the gate capacitance of the capacitor switching element106 disappears while the capacitor switching element 106 is in anoff-state. Thus, when, for example, high-level data is stored in thecapacitor 105, the potential of the input terminal of the firstphase-inversion element 101 becomes approximately +0.75 V, which ishigher than the precharge potential of +0.5 V, and when low-level datais stored in the capacitor 105, the potential of the input terminal ofthe first phase-inversion element 101 becomes approximately +0.28 V,which is lower than the precharge potential.

Note that in the case where the precharge potential is 0 V, thepotential of the input terminal of the first phase-inversion element 101when high-level data is stored in the capacitor 105 becomes 0.49V, andthe potential of the input terminal of the first phase-inversion element101 when low-level data is stored in the capacitor 105 becomes 0.02V. Ineither case, the potential of the input terminal of the firstphase-inversion element 101 is higher than the potential of the inputterminal of the second phase-inversion element 102 (the prechargepotential of 0 V), which causes an error in amplification to beperformed later; therefore, it is necessary to select an appropriateprecharge potential.

<Amplification>

Next, the potential of the first node is changed from +0.5 V to +1 V,and the potential of the second node is changed from +0.5 V to 0 V. Itis preferable that the potentials of the first node and the second nodebe changed symmetrically. Further, in order to decrease the probabilityof occurrence of an error, the change is performed slowly as much aspossible.

By such a manner, a difference between the potential of the inputterminal of the first phase-inversion element and the potential of theinput terminal of the second phase-inversion element is amplified. Thesmaller the potential difference is or the shorter a period of time foramplification is, the higher an error during amplification is morelikely occur. The acceptable time for operation of power return is farlong as compared to the clock frequency of a general memory.Amplification which is performed slowly makes it possible to decreasethe probability of an error even when the potential difference is small.

Although a thin film transistor formed with use of a highly purifiedoxide semiconductor is used as the capacitor switching element 106 inthe above, a thin film transistor formed with use of, for example,amorphous silicon, polysilicon, or microcrystalline silicon may be used.

In that case, the off-state current becomes larger than that of the thinfilm transistor formed with use of a highly purified oxidesemiconductor; as a result, a period for holding data becomes short.However, data can be continuously held by performing the “refresh” asfollows: outputting data periodically to the first phase-inversionelement 101 and the second phase-inversion element 102 and sending databack to the capacitor 105 are repeated.

As for this reflesh, the refresh can be operated on all memory elementswhich need to be refreshed at the same time in one chip, which isdifferent from the refresh in a DRAM. Therefore, time needed for therefresh in one chip is extremely short. Of course, the refresh in onechip may be sequentially performed per block of memory elements.

Embodiment 2

In this embodiment, another example of a memory element included in amemory device of the present invention will be described. FIG. 3A is acircuit diagram illustrating a memory element of this embodiment.

A memory element 120 illustrated in FIG. 3A at least includes a firstphase-inversion element 101 and a second phase-inversion element 102 bywhich the phase of an input signal is inverted and the signal is output,a switching element 103, a switching element 104, a capacitor 105, and acapacitor switching element 106.

The memory element 120 also includes a switching element 111. Theswitching element 111 is provided between the input terminal of thesecond phase-inversion element 102 and the node to which the prechargepotential VP is supplied, and controlled by a signal Sig. 4.

A signal IN including data that is input to the memory element 120 issupplied to an input terminal of the first phase-inversion element 101via the switching element 103. An output terminal of the firstphase-inversion element 101 is connected to an input terminal of thesecond phase-inversion element 102. An output terminal of the secondphase-inversion element 102 is connected to the input terminal of thefirst phase-inversion element 101 via the switching element 104. Thepotential of the output terminal of the first phase-inversion element101 or the potential of the input terminal of the second phase-inversionelement 102 is output to a memory element or another circuit of asubsequent stage as a signal OUT.

The capacitor 105 is connected to an input terminal of the memoryelement 120, i.e., a node to which a potential of the signal IN issupplied, via the switching element 103 and the capacitor switchingelement 106 so that the data of the signal IN that is input to thememory element 120 can be stored as needed. Specifically, the capacitor105 includes a dielectric between a pair of electrodes. One of theelectrodes is connected to the input terminal of the firstphase-inversion element 101 via the capacitor switching element 106. Theother of the electrodes is connected to a node to which a potential VEsuch as a ground potential is supplied.

Note that in FIG. 3A, an example in which inverters are used as thefirst phase-inversion element 101 and the second phase-inversion element102 is illustrated; however, a clocked inverter can also be used as thefirst phase-inversion element 101 or the second phase-inversion element102 besides the inverter.

For the capacitor switching element 106, a transistor including a highlypurified oxide semiconductor in a channel formation region is used. Likethe capacitor switching element 106 in Embodiment 1, the capacitorswitching element 106 may be formed above the first phase-inversionelement 101 and the second phase-inversion element 102 with use of anoxide semiconductor, and the channel length may be greater than or equalto 10 F, preferably greater than or equal to 20 F, further preferablygreater than or equal to 50 F.

Note that the memory element 120 may further include another circuitelement such as a diode, a resistor, an inductor, or a capacitor, asneeded.

Next, an example of a specific circuit diagram of the memory element inFIG. 3A is illustrated in FIG. 3B. The memory element 120 in FIG. 3Bincludes at least the first phase-inversion element 101, the secondphase-inversion element 102, the switching element 103, the switchingelement 104, the capacitor 105, the capacitor switching element 106, andthe switching element 111. The connection structure of these circuitelements is the same as that in FIG. 3A. Embodiment 1 can be referred tofor details of the first phase-inversion element 101 and the secondphase-inversion element 102 in FIG. 3B.

In FIG. 3B, the case where one transistor is used for the switchingelement 103 is illustrated as an example, and the switching of thetransistor is controlled by a signal Sig. 1 supplied to a gate electrodethereof. In addition, the case where one transistor is used for theswitching element 104 is illustrated as an example, and the switching ofthe transistor is controlled by a signal Sig. 2 supplied to a gateelectrode thereof. Further, the case where one transistor is used forthe switching element 111 is illustrated as an example, and theswitching of this transistor is controlled by a signal Sig. 4 suppliedto a gate electrode thereof.

Note that in FIG. 3B, a structure in which each of the switching element103, the switching element 104, and the switching element 111 includesonly one transistor is illustrated; however, the present invention isnot limited to this structure. In one embodiment of the presentinvention, the switching element 103, the switching element 104, or theswitching element 111 may include a plurality of transistors.

In the case where a plurality of transistors which serve as switchingelements are included in the switching element 103, the switchingelement 104, or the switching element 111, the plurality of transistorsmay be connected to each other in parallel, in series, or in combinationof parallel connection and series connection.

In FIG. 3B, a transistor including an oxide semiconductor in a channelformation region is used for the capacitor switching element 106, andthe switching of the transistor is controlled by a signal Sig. 3supplied to a gate electrode thereof. Since the transistor used for thecapacitor switching element 106 includes a highly purified oxidesemiconductor in a channel formation region, the amount of off-statecurrent thereof is extremely small as described above.

In FIG. 3B, a structure in which the capacitor switching element 106includes only one transistor is illustrated; however, the presentinvention is not limited to this structure. In one embodiment of thepresent invention, the capacitor switching element 106 may include aplurality of transistors. In the case where a plurality of transistorswhich serve as switching elements are included in the capacitorswitching element 106, the plurality of transistors may be connected toeach other in parallel, in series, or in combination of parallelconnection and series connection.

In this embodiment, at least a transistor used for a switching elementin the capacitor switching element 106 includes a compoundsemiconductor, e.g., a highly purified oxide semiconductor, in a channelformation region.

On the other hand, each of the transistors used for the firstphase-inversion element 101, the second phase-inversion element 102, theswitching element 103, the switching element 104, and the switchingelement 111 can include a semiconductor other than an oxidesemiconductor, e.g., an amorphous, microcrystalline, polycrystalline, orsingle crystal semiconductor can be used. As such a material of asemiconductor, silicon and germanium can be given. The transistor may bemanufactured with use of a thin semiconductor film or a bulksemiconductor wafer.

If a p-channel transistor including an oxide semiconductor film can bemanufactured, all of the transistors in the memory element can includean oxide semiconductor film as an active layer, so that the process canbe simplified.

Next, an example of the operation of the memory element illustrated inFIG. 3A or FIG. 3B is described. Note that the memory element can beoperated by a method other than the following description. The switchingelement 111 is turned off in order to operate data writing, dataretention by the first phase-inversion element 101 and the secondphase-inversion element 102, and input data retention by the capacitor105. Details are the same as those in Embodiment 1 and thus omitted.

In order to recover data stored in the capacitor 105, steps ofprecharge, discharge, and amplification are performed as inEmbodiment 1. Part of a step of precharge differs from the process ofprecharge in Embodiment 1. In the memory element 120 of this embodiment,the signal IN, the first node, and the second node are at least set tothe precharge potential.

Then, the switching element 103, the switching element 104, and theswitching element 111 are turned on. As a result, in addition to theinput terminal of the first phase-inversion element 101, the input andoutput terminals of the second phase-inversion element 102 can be theprecharge potential rapidly (within one microsecond).

After that, the switching element 103 is turned off. Discharge andamplification may be performed in the manner described in Embodiment 1.

In the conventional memory element 200 in FIGS. 2A to 2C, a plurality ofmemory elements is connected in series, which is the same as in thememory element 120 illustrated in FIGS. 3A and 3B. An operation examplewill be described below of a circuit in which memory elements 120 a and120 b are connected in series, with reference to FIGS. 10A to 10C andFIGS. 11A to 11C. The memory elements 120 a and 120 b each have acircuit configuration the same as that of the memory element 120 inFIGS. 3A and 3B.

Note that in FIGS. 10A to 10C and FIGS. 11A to 11C, transistors in anon-state and phase-inversion circuits in an active state are marked witha circle, and transistors in an off-state and phase-inversion circuitsin a non-active state are marked with a cross.

<FIG. 10A>

Data is held in each of the memory element 120 a and the memory element120 b. Here, in the memory element 120 a, the potential of the inputterminal of the first phase-inversion element is +1 V and the potentialof the output terminal thereof is 0 V; in the memory element 120 b, thepotential of the input terminal of the first phase-inversion element is0 V and the potential of the output terminal thereof is +1 V.

At this time, a switching element 103 a, a switching element 103 b, acapacitor switching element 106 a, a capacitor switching element 106 b,a switching element 111 a, and a switching element 111 b are in anoff-state, and a switching element 104 a and a switching element 104 bare in an on-state.

<FIG. 10B>

The capacitor switching elements 106 a and 106 b are turned on. As aresult, charge corresponding to data of the memory element 120 a and thememory element 120 b is stored in a capacitor 105 a and a capacitor 105b, respectively.

<FIG. 10C>

After that, the switching element 104 a, the switching element 104 b,the capacitor switching element 106 a, and the capacitor switchingelement 106 b are turned off. In each of the memory element 120 a andthe memory element 120 b, the first node and the second node of thefirst phase-inversion element and the second phase-inversion element areset to the same potential, for example, set to the precharge potential+0.5 V. Note that the switching elements 104 a and 104 b may be kept on.

In the above manner, the first phase-inversion element and the secondphase-inversion element in each of the memory element 120 a and thememory element 120 b is deactivated. Data which has been stored in thefirst phase-inversion element and the second phase-inversion element ineach of the memory element 120 a and the memory element 120 b can beheld in the capacitor 105 a and the capacitor 105 b, respectively.

<FIG. 11A>

Precharge is performed. For the precharge, the potential of the inputterminal of the first phase-inversion element in the memory element 120a is set to the precharge potential +0.5 V. Further, the switchingelement 103 a, the switching element 103 b, the switching element 104 a,the switching element 104 b, the switching element 111 a, and theswitching element 111 b are turned on.

As a result, not only the potential of the input terminal of the firstphase-inversion element in the memory element 120 a, but also thepotential of the output terminal of the first phase-inversion element inthe memory element 120 a and the potential of the input terminal and thepotential of the output terminal of the first phase-inversion element inthe memory element 120 b become the precharge potential +0.5 V.

<FIG. 11B>

The switching element 103 a, the switching element 103 b, the switchingelement 111 a, and the switching element 111 b are turned off. Further,the capacitor switching element 106 a and the capacitor switchingelement 106 b are turned on. As a result, the potential of the inputterminal of the first phase-inversion element in each of the memoryelement 120 a and the memory element 120 b varies in accordance with thestored data.

Here, suppose that the potential of the input terminal of the firstphase-inversion element in the memory element 120 a becomes +0.7 V, andthat the potential of the input terminal of the first phase-inversionelement in the memory element 120 b becomes +0.3 V.

<FIG. 11C>

After that, in the memory element 120 a and the memory element 120 b,the first node and the second node of each of the first phase-inversionelement and the second phase-inversion element are set to +1 V and 0 V,respectively. The first phase-inversion element and the secondphase-inversion element in each of the memory element 120 a and thememory element 120 b become active, and amplify a potential differenceof the respective input terminals. That is, a state shown in FIG. 10Acan be reproduced.

Although a thin film transistor formed with use of a highly purifiedoxide semiconductor is used as the capacitor switching element in theabove, a thin film transistor formed with use of, for example, amorphoussilicon, polysilicon, or microcrystalline silicon may be used.

The matter disclosed in this embodiment can be implemented inappropriate combination with the matter described in the otherembodiments.

Embodiment 3

In this embodiment, another example of a memory element included in amemory device of the present invention will be described. FIG. 4A is acircuit diagram illustrating an example of a memory element of thisembodiment.

A memory element 130 illustrated in FIG. 4A at least includes a firstphase-inversion element 101 and a second phase-inversion element 102 bywhich the phase of an input signal is inverted and the signal is output,a switching element 103, a switching element 104, a capacitor 105, acapacitor switching element 106, a capacitor 112, and a capacitorswitching element 113.

A signal IN including data that is input to the memory element 130 issupplied to an input terminal of the first phase-inversion element 101via the switching element 103. An output terminal of the firstphase-inversion element 101 is connected to an input terminal of thesecond phase-inversion element 102. An output terminal of the secondphase-inversion element 102 is connected to the input terminal of thefirst phase-inversion element 101 via the switching element 104. Thepotential of the output terminal of the first phase-inversion element101 or the potential of the input terminal of the second phase-inversionelement 102 is output to a memory element or another circuit of asubsequent stage as a signal OUT.

The capacitor 105 is connected to an input terminal of the memoryelement 130, i.e., a node to which a potential of the signal IN issupplied, via the switching element 103 and the capacitor switchingelement 106 so that the data of the signal IN that is input to thememory element 130 can be stored as needed. Specifically, the capacitor105 includes a dielectric between a pair of electrodes. One of theelectrodes is connected to the input terminal of the firstphase-inversion element 101 via the capacitor switching element 106. Theother of the electrodes is connected to a node to which a potential VEsuch as a ground potential is supplied.

In a manner similar to that of the capacitor 105, the capacitor 112 isconnected to an input terminal of the memory element 130, i.e., a nodeto which a potential of the signal IN is supplied, via the switchingelement 103, the first phase-inversion element 101, and the capacitorswitching element 113 so that the data of the signal IN input to thememory element 130 can be stored as needed. Specifically, the capacitor112 includes a dielectric between a pair of electrodes. One of theelectrodes is connected to the output terminal of the firstphase-inversion element 101 via the capacitor switching element 113. Theother of the electrodes is connected to a node to which a potential VEsuch as a ground potential is supplied.

Note that in FIG. 4A, an example in which inverters are used as thefirst phase-inversion element 101 and the second phase-inversion element102 is illustrated; however, a clocked inverter can also be used as thefirst phase-inversion element 101 or the second phase-inversion element102 besides the inverter.

For the capacitor switching element 106 and the capacitor switchingelement 113, a transistor including a highly purified oxidesemiconductor in a channel formation region is used. Like the capacitorswitching element 106 in Embodiment 1, the capacitor switching element106 and the capacitor switching element 113 are formed above the firstphase-inversion element 101 and the second phase-inversion element 102with use of an oxide semiconductor, and the channel length is greaterthan or equal to 10 F, preferably greater than or equal to 20 F, furtherpreferably greater than or equal to 50 F.

Note that the memory element 130 may further include another circuitelement such as a diode, a resistor, an inductor, or a capacitor, asneeded.

Next, an example of a specific circuit diagram of the memory element inFIG. 4A is illustrated in FIG. 4B. The memory element 130 in FIG. 4Bincludes at least the first phase-inversion element 101, the secondphase-inversion element 102, the switching element 103, the switchingelement 104, the capacitor 105, the capacitor switching element 106, thecapacitor 112, and the capacitor switching element 113. The connectionstructure of these circuit elements is the same as that in FIG. 4A.Embodiment 1 can be referred to for details of the first phase-inversionelement 101 and the second phase-inversion element 102 in FIG. 4B.

In FIG. 4B, the case where one transistor is used for the switchingelement 103 is illustrated as an example, and the switching of thetransistor is controlled by a signal Sig. 1 supplied to a gate electrodethereof. In addition, the case where one transistor is used for theswitching element 104 is illustrated as an example, and the switching ofthe transistor is controlled by a signal Sig. 2 supplied to a gateelectrode thereof.

Note that in FIG. 4B, a structure in which each of the switching element103 and the switching element 104 includes only one transistor isillustrated; however, the present invention is not limited to thisstructure. In one embodiment of the present invention, the switchingelement 103 or the switching element 104 may include a plurality oftransistors. In the case where a plurality of transistors which serve asswitching elements are included in the switching element 103 or theswitching element 104, the plurality of transistors may be connected toeach other in parallel, in series, or in combination of parallelconnection and series connection.

In FIG. 4B, a transistor including an oxide semiconductor in a channelformation region is used for the capacitor switching element 106, andthe switching of the transistor is controlled by a signal Sig. 3supplied to a gate electrode thereof. Since the transistor used for thecapacitor switching element 106 includes a highly purified oxidesemiconductor in a channel formation region, the amount of off-statecurrent thereof is extremely small as described above.

In FIG. 4B, a transistor including an oxide semiconductor in a channelformation region is used for the capacitor switching element 113, andthe switching of the transistor is controlled by a signal Sig. 5supplied to a gate electrode thereof. Since the transistor used for thecapacitor switching element 113 includes a highly purified oxidesemiconductor in a channel formation region and has a sufficient longchannel length, the amount of off-state current thereof is extremelysmall as described above.

Note that although the signal Sig. 3 and the signal Sig. 5 may beindependently controlled, the signal Sig. 3 and the signal Sig. 5 may becontrolled in synchronization because the capacitor switching element106 and the capacitor switching element 113 operate at almost the sametiming before stop of power supply and at data recovery. In the casewhere the signal Sig. 3 and the signal Sig. 5 are controlled insynchronization, circuit configuration can be simplified, which ispreferable.

In FIG. 4B, a structure in which the capacitor switching element 106 orthe capacitor switching element 113 includes only one transistor isillustrated; however, the present invention is not limited to thisstructure. In one embodiment of the present invention, the capacitorswitching element 106 or the capacitor switching element 113 may includea plurality of transistors. In the case where a plurality of transistorswhich serve as switching elements are included in the capacitorswitching element 106 or the capacitor switching element 113, theplurality of transistors may be connected to each other in parallel, inseries, or in combination of parallel connection and series connection.

In this embodiment, at least a transistor used for a switching elementin the capacitor switching element 106 or the capacitor switchingelement 113 includes a compound, e.g., a highly purified oxidesemiconductor, in a channel formation region.

On the other hand, each of the transistors used for the firstphase-inversion element 101, the second phase-inversion element 102, theswitching element 103, and the switching element 104 can include asemiconductor other than an oxide semiconductor, e.g., an amorphous,microcrystalline, polycrystalline, or single crystal semiconductor canbe used. As such a material of a semiconductor, silicon and germaniumcan be given.

The transistor may be manufactured with use of a thin semiconductor filmor a bulk semiconductor wafer. If a p-channel transistor including anoxide semiconductor film can be manufactured, all of the transistors inthe memory element can include an oxide semiconductor film as an activelayer, so that the process can be simplified.

Next, an example of the operation of the memory element illustrated inFIG. 4A or FIG. 4B is described. Note that the memory element can beoperated by a method other than the following description.

First, in writing data, the switching element 103 is turned on, theswitching element 104 is turned off, the capacitor switching element 106is turned off, and the capacitor switching element 113 is turned off.Then, the potential VDD is supplied to the first node and the potentialVSS is supplied to the second node, whereby power supply voltage isapplied between the first node and the second node.

A potential of the signal IN supplied to the memory element 130 issupplied to the input terminal of the first phase-inversion element 101via the switching element 103, whereby the potential of the outputterminal of the first phase-inversion element 101 is a phase-invertedpotential of the signal IN. Then, the switching element 104 is turned onand the input terminal of the first phase-inversion element 101 isconnected to the output terminal of the second phase-inversion element102, whereby data is written into the first phase-inversion element 101and the second phase-inversion element 102.

Next, in the case where data is held by the first phase-inversionelement 101 and the second phase-inversion element 102, in the statewhere the switching element 104 remains in an on-state, the capacitorswitching element 106 and the capacitor switching element 113 remain inan off-state, the switching element 103 is turned off.

By turning off the switching element 103, the input data is held by thefirst phase-inversion element 101 and the second phase-inversion element102. At this time, the potential VDD is supplied to the first node andthe potential VSS is supplied to the second node, whereby the state inwhich the power supply voltage is applied between the first node and thesecond node is maintained.

The potential of the output terminal of the first phase-inversionelement 101 reflects the data held by the first phase-inversion element101 and the second phase-inversion element 102. Therefore, by readingout the potential, the data can be read out from the memory element 130.

Note that in the case where the input data is held by the capacitor 105and the capacitor 112 in order to reduce power consumption in holdingthe data, the switching element 103 is turned off, the switching element104 is turned on, the capacitor switching element 106 is turned on, andthe capacitor switching element 113 is turned on.

Then, via the capacitor switching element 106, electric charge with anamount corresponding to the value of the data held by the firstphase-inversion element 101 and the second phase-inversion element 102is stored in the capacitor 105, whereby the data is written into thecapacitor 105. Further, via the capacitor switching element 113,electric charge with an amount corresponding to the value of the dataheld by the first phase-inversion element 101 and the secondphase-inversion element 102 is stored in the capacitor 112, whereby thedata is written into the capacitor 112.

After the data is stored in the capacitor 105, the capacitor switchingelement 106 is turned off, whereby the data stored in the capacitor 105is held. In addition, after the data is stored in the capacitor 112, thecapacitor switching element 113 is turned off, whereby the data storedin the capacitor 112 is held. After turning off the capacitor switchingelement 106 and the capacitor switching element 113, the potential VSS,for example, is applied to the first node and the second node so thatthe nodes have equal potentials, and the application of the power supplyvoltage between the first node and the second node is stopped.

In such a manner, in the case where the input data is held by thecapacitor 105 and the capacitor 112, the application of the power supplyvoltage between the first node and the second node is unnecessary;therefore, the off-state current flowing between the first node and thesecond node via the p-channel transistor 107 and the n-channeltransistor 108 which are included in the first phase-inversion element101, or via the p-channel transistor 109 and the re-channel transistor110 which are included in the second phase-inversion element 102 can beextremely close to zero.

As a result, power consumption due to the off-state current of thememory element in holding data can be significantly reduced, andaccordingly the power consumption of the memory device and further thesignal processing circuit including the memory device can be suppressedto be low.

Since the transistor used for the capacitor switching element 106 andthe capacitor switching element 113 includes a highly-purified oxidesemiconductor in a channel formation region, the off-state currentdensity can be less than or equal to 100 zA/μm, preferably less than orequal to 10 zA/μm, further preferably less than or equal to 1 zA/μm.

Accordingly, the transistor including a highly purified oxidesemiconductor film as an active layer has far lower off-state currentthan a transistor including silicon having crystallinity. As a result,when the capacitor switching element 106 for which the above transistoris used is off, charge stored in the capacitor 105 is hardly released;therefore, the data is held. In addition, when the capacitor switchingelement 113 for which the above transistor is used is off, charge storedin the capacitor 112 is hardly released; therefore, the data is held.

Note that in order to recover data stored in the capacitor 105 and thecapacitor 112, steps of precharge, discharge, and amplification areperformed as in Embodiment 1. In the memory element of this embodiment,the first phase-inversion element 101 is provided with the capacitorswitching element 106 and the capacitor 105, and the secondphase-inversion element 102 is provided with the capacitor switchingelement 113 and the capacitor 112. In accordance with characteristics ofthe circuit, different data is held in the respective capacitors (whencharge of high level potential is held in one chapacitor, charge of lowlevel potential is held in the other capacitor).

Consequently, regardless of the value of the precharge potential, apotential difference in accordance with data is constantly generatedbetween the input terminal of the first phase-inversion element 101 andthe input terminal of the second phase-inversion element 102. Therefore,there is less restriction on the precharge potential as compared withthose in Embodiment 1. For example, the precharge potential can be setto 0V. Note that when amplification is performed for a short period oftime, the precharge potential may be set to an appropriate potential.

After the precharge is completed, the switching element 103 is turnedoff. Discharge and amplification may be performed in the mannerdescribed in Embodiment 1. Note that although thin film transistorsformed with use of a highly purified oxide semiconductor is used as thecapacitor switching elements 106 and 113 in the above, thin filmtransistors formed with use of, for example, amorphous silicon,polysilicon, or microcrystalline silicon may be used.

The matter disclosed in this embodiment can be implemented inappropriate combination with the matter described in the otherembodiments.

Embodiment 4

In this embodiment, another example of a memory element included in amemory device of the present invention will be described. FIG. 5A is acircuit diagram illustrating an example of a memory element of thisembodiment.

A memory element 140 illustrated in FIG. 5A at least includes a firstphase-inversion element 101 and a second phase-inversion element 102 bywhich the phase of an input signal is inverted and the signal is output,a switching element 103, a switching element 104, a capacitor 105, and acapacitor switching element 106.

The memory element 140 also includes a switching element 114. Theswitching element 114 is provided between the input terminal of thefirst phase-inversion element 101 and the input terminal of the secondphase-inversion element 102, and controlled by a signal Sig. 6.

A signal IN including data that is input to the memory element 140 issupplied to an input terminal of the first phase-inversion element 101via the switching element 103. An output terminal of the firstphase-inversion element 101 is connected to an input terminal of thesecond phase-inversion element 102. An output terminal of the secondphase-inversion element 102 is connected to the input terminal of thefirst phase-inversion element 101 via the switching element 104. Thepotential of the output terminal of the first phase-inversion element101 or the potential of the input terminal of the second phase-inversionelement 102 is output to a memory element or another circuit of asubsequent stage as a signal OUT.

The capacitor 105 is connected to an input terminal of the memoryelement 140, i.e., a node to which a potential of the signal IN issupplied, via the switching element 103 and the capacitor switchingelement 106 so that the data of the signal IN that is input to thememory element 140 can be stored as needed. Specifically, the capacitor105 includes a dielectric between a pair of electrodes. One of theelectrodes is connected to the input terminal of the firstphase-inversion element 101 via the capacitor switching element 106. Theother of the electrodes is connected to a node to which a potential VEsuch as a ground potential is supplied.

Note that in FIG. 5A, an example in which inverters are used as thefirst phase-inversion element 101 and the second phase-inversion element102 is illustrated; however, a clocked inverter can also be used as thefirst phase-inversion element 101 or the second phase-inversion element102 besides the inverter.

For the capacitor switching element 106, a transistor including a highlypurified oxide semiconductor in a channel formation region is used. Likethe capacitor switching element 106 in Embodiment 1, the capacitorswitching element 106 is formed above the first phase-inversion element101 and the second phase-inversion element 102 with use of an oxidesemiconductor, and the channel length is greater than or equal to 10 F,preferably greater than or equal to 20 F, further preferably greaterthan or equal to 50 F.

Note that the memory element 140 may further include another circuitelement such as a diode, a resistor, an inductor, or a capacitor, asneeded.

Next, an example of a specific circuit diagram of the memory element inFIG. 5A is illustrated in FIG. 5B. The memory element 140 in FIG. 5Bincludes at least the first phase-inversion element 101, the secondphase-inversion element 102, the switching element 103, the switchingelement 104, the capacitor 105, the capacitor switching element 106, andthe switching element 114. The connection structure of these circuitelements is the same as that in FIG. 5A. Embodiment 1 can be referred tofor details of the first phase-inversion element 101 and the secondphase-inversion element 102 in FIG. 5B.

In FIG. 5B, the case where one transistor is used for the switchingelement 103 is illustrated as an example, and the switching of thetransistor is controlled by a signal Sig. 1 supplied to a gate electrodethereof. In addition, the case where one transistor is used for theswitching element 104 is illustrated as an example, and the switching ofthe transistor is controlled by a signal Sig. 2 supplied to a gateelectrode thereof. Further, the case where one transistor is used forthe switching element 114 is illustrated as an example, and theswitching of this transistor is controlled by a signal Sig. 6 suppliedto a gate electrode thereof.

Note that in FIG. 5B, a structure in which each of the switching element103, the switching element 104, and the switching element 114 includesonly one transistor is illustrated; however, the present invention isnot limited to this structure. In one embodiment of the presentinvention, the switching element 103, the switching element 104, or theswitching element 114 may include a plurality of transistors. In thecase where a plurality of transistors which serve as switching elementsare included in the switching element 103, the switching element 104, orthe switching element 114, the plurality of transistors may be connectedto each other in parallel, in series, or in combination of parallelconnection and series connection.

In FIG. 5B, a transistor including an oxide semiconductor in a channelformation region is used for the capacitor switching element 106, andthe switching of the transistor is controlled by a signal Sig. 3supplied to a gate electrode thereof. Since the transistor used for thecapacitor switching element 106 includes a highly purified oxidesemiconductor in a channel formation region, the amount of off-statecurrent thereof is extremely small as described above.

Note that in FIG. 5B, a structure in which the capacitor switchingelement 106 includes only one transistor is illustrated; however, thepresent invention is not limited to this structure. In one embodiment ofthe present invention, the capacitor switching element 106 may include aplurality of transistors. In the case where a plurality of transistorswhich serve as switching elements are included in the capacitorswitching element 106, the plurality of transistors may be connected toeach other in parallel, in series, or in combination of parallelconnection and series connection.

In this embodiment, at least a transistor used for a switching elementin the capacitor switching element 106 includes a highly purified oxidesemiconductor in a channel formation region. Each of the transistorsused for the first phase-inversion element 101, the secondphase-inversion element 102, the switching element 103, the switchingelement 104, and the switching element 114 can include a semiconductorother than an oxide semiconductor, e.g., an amorphous, microcrystalline,polycrystalline, or single crystal semiconductor can be used. As such amaterial of a semiconductor, silicon and germanium can be given.

The transistor may be manufactured with use of a thin semiconductor filmor a bulk semiconductor wafer. If a p-channel transistor including anoxide semiconductor film can be manufactured, all of the transistors inthe memory element can include an oxide semiconductor film as an activelayer, so that the process can be simplified.

Next, an example of the operation of the memory element illustrated inFIG. 5A or FIG. 5B is described. Note that the memory element can beoperated by a method other than the following description. The switchingelement 114 is turned off in order to operate data writing, dataretention by the first phase-inversion element 101 and the secondphase-inversion element 102, and input data retention by the capacitor105. Details are the same as those in Embodiment 1 and thus omitted.

In order to recover data stored in the capacitor 105, steps ofprecharge, discharge, and amplification are performed as inEmbodiment 1. A step of precharge differs from the process of prechargein Embodiment 1. In the memory element 140 of this embodiment, thesignal IN, the first node, and the second node are at least set to theprecharge potential.

Then, the switching element 103, the switching element 104, and theswitching element 114 are turned on. As a result, in addition to theinput terminal of the first phase-inversion element 101, the input andoutput terminals of the second phase-inversion element 102 can be theprecharge potential rapidly (within one microsecond).

After that, the switching element 103 and the switching element 114 areturned off. Discharge and amplification may be performed in the mannerdescribed in Embodiment 1. Note that although a thin film transistorformed with use of a highly purified oxide semiconductor is used as thecapacitor switching element 106 in the above, a thin film transistorformed with use of, for example, amorphous silicon, polysilicon, ormicrocrystalline silicon may be used.

The matter disclosed in this embodiment can be implemented inappropriate combination with the matter described in the otherembodiments.

Embodiment 5

In this embodiment, another example of a memory element included in amemory device of the present invention will be described. FIG. 6A is acircuit diagram illustrating an example of a memory element of thisembodiment.

A memory element 150 illustrated in FIG. 6A at least includes a firstphase-inversion element 101 and a second phase-inversion element 102 bywhich the phase of an input signal is inverted and the signal is output,a switching element 103, a switching element 104, a capacitor 105, acapacitor switching element 106, and a switching element 115.

A signal IN including data that is input to the memory element 150 issupplied to an input terminal of the first phase-inversion element 101via the switching element 103. An output terminal of the firstphase-inversion element 101 is connected to an input terminal of thesecond phase-inversion element 102. An output terminal of the secondphase-inversion element 102 is connected to the input terminal of thefirst phase-inversion element 101 via the switching element 104. Thepotential of the output terminal of the first phase-inversion element101 or the potential of the input terminal of the second phase-inversionelement 102 is output to a memory element or another circuit of asubsequent stage as a signal OUT.

The output terminal of the first phase-inversion element 101 isconnected to the output terminal of the second phase-inversion element102 through the switching element 115.

The capacitor 105 is connected to an input terminal of the memoryelement 150, i.e., a node to which a potential of the signal IN issupplied, via the switching element 103 and the capacitor switchingelement 106 so that the data of the signal IN that is input to thememory element 150 can be stored as needed.

Specifically, the capacitor 105 includes a dielectric between a pair ofelectrodes. One of the electrodes is connected to the input terminal ofthe first phase-inversion element 101 via the capacitor switchingelement 106. The other of the electrodes is connected to a node to whicha potential VE such as a ground potential is supplied.

Note that in FIG. 6A, an example in which inverters are used as thefirst phase-inversion element 101 and the second phase-inversion element102 is illustrated; however, a clocked inverter can also be used as thefirst phase-inversion element 101 or the second phase-inversion element102 besides the inverter.

For the capacitor switching element 106, a transistor including a highlypurified oxide semiconductor in a channel formation region is used. Likethe capacitor switching element 106 in Embodiment 1, the capacitorswitching element 106 is formed above the first phase-inversion element101 and the second phase-inversion element 102 with use of an oxidesemiconductor, and the channel length is greater than or equal to 10 F,preferably greater than or equal to 20 F, further preferably greaterthan or equal to 50 F.

Note that the memory element 150 may further include another circuitelement such as a diode, a resistor, an inductor, or a capacitor, asneeded.

Next, an example of a specific circuit diagram of the memory element inFIG. 6A is illustrated in FIG. 6B. The memory element 150 in FIG. 6Bincludes at least the first phase-inversion element 101, the secondphase-inversion element 102, the switching element 103, the switchingelement 104, the capacitor 105, the capacitor switching element 106, andthe switching element 115. The connection structure of these circuitelements is the same as that in FIG. 6A. Embodiment 1 can be referred tofor details of the first phase-inversion element 101 and the secondphase-inversion element 102 in FIG. 6B.

In FIG. 6B, the case where one transistor is used for the switchingelement 103 is illustrated as an example, and the switching of thetransistor is controlled by a signal Sig. 1 supplied to a gate electrodethereof. In addition, the case where one transistor is used for theswitching element 104 is illustrated as an example, and the switching ofthe transistor is controlled by a signal Sig. 2 supplied to a gateelectrode thereof. Further, the case where one transistor is used forthe switching element 115 is illustrated as an example, and theswitching of this transistor is controlled by a signal Sig. 7 suppliedto a gate electrode thereof.

Note that in FIG. 6B, a structure in which each of the switching element103, the switching element 104, and the switching element 115 includesonly one transistor is illustrated; however, the present invention isnot limited to this structure. In one embodiment of the presentinvention, the switching element 103, the switching element 104, or theswitching element 115 may include a plurality of transistors. In thecase where a plurality of transistors which serve as switching elementsare included in the switching element 103, the switching element 104, orthe switching element 115, the plurality of transistors may be connectedto each other in parallel, in series, or in combination of parallelconnection and series connection.

In FIG. 6B, a transistor including an oxide semiconductor in a channelformation region is used for the capacitor switching element 106, andthe switching of the transistor is controlled by a signal Sig. 3supplied to a gate electrode thereof. Since the transistor used for thecapacitor switching element 106 includes a highly purified oxidesemiconductor in a channel formation region, the amount of off-statecurrent thereof is extremely small as described above.

Note that in FIG. 6B, a structure in which the capacitor switchingelement 106 includes only one transistor is illustrated; however, thepresent invention is not limited to this structure. In one embodiment ofthe present invention, the capacitor switching element 106 may include aplurality of transistors. In the case where a plurality of transistorswhich serve as switching elements are included in the capacitorswitching element 106, the plurality of transistors may be connected toeach other in parallel, in series, or in combination of parallelconnection and series connection.

In this embodiment, at least a transistor used for a switching elementin the capacitor switching element 106 includes a highly purified oxidesemiconductor in a channel formation region. Each of the transistorsused for the first phase-inversion element 101, the secondphase-inversion element 102, the switching element 103, the switchingelement 104, and the switching element 115 can include a semiconductorother than an oxide semiconductor, e.g., an amorphous, microcrystalline,polycrystalline, or single crystal semiconductor can be used. As such amaterial of a semiconductor, silicon and germanium can be given.

The transistor may be manufactured with use of a thin semiconductor filmor a bulk semiconductor wafer. If a p-channel transistor including anoxide semiconductor film can be manufactured, all of the transistors inthe memory element can include an oxide semiconductor film as an activelayer, so that the process can be simplified.

Next, an example of the operation of the memory element illustrated inFIG. 6A or FIG. 6B is described. Note that the memory element can beoperated by a method other than the following description. Since datawriting, input data retention, data writing to the capacitor 105, andthe like are the same as those in Embodiment 1, description thereof isomitted, and data recovery will be described below.

In order to recover data stored in the capacitor 105, steps ofprecharge, discharge, and amplification are performed as inEmbodiment 1. In the step of precharge, the switching element 103, theswitching element 104, and the switching element 115 are turned on, andat least the signal IN, the potential of the first node, and thepotential of the second node are set to the precharge potential.

Since the switching element 115 is turned on here, the potential of theinput terminal of the second phase-inversion element 102 becomes theprecharge potential rapidly (within one microsecond).

After that, the switching element 103 and the switching element 115 areturned off. Discharge and amplification may be performed in the mannerdescribed in Embodiment 1. Note that although a thin film transistorformed with use of a highly purified oxide semiconductor is used as thecapacitor switching element 106 in the above, a thin film transistorformed with use of, for example, amorphous silicon, polysilicon, ormicrocrystalline silicon may be used.

The matter disclosed in this embodiment can be implemented inappropriate combination with the matter described in the otherembodiments.

Embodiment 6

In this embodiment, another example of a memory element included in amemory device of the present invention will be described. FIG. 9A is acircuit diagram illustrating an example of a memory element of thisembodiment.

A memory element 160 illustrated in FIG. 9A at least includes a firstphase-inversion element 101 and a second phase-inversion element 102 bywhich the phase of an input signal is inverted and the signal is output,a switching element 103, a switching element 104, a capacitor 105, acapacitor switching element 106, and a switching element 116.

A signal IN including data that is input to the memory element 160 issupplied to an input terminal of the first phase-inversion element 101via the switching element 103. An output terminal of the firstphase-inversion element 101 is connected to an input terminal of thesecond phase-inversion element 102. The output terminal of the secondphase-inversion element 102 is connected to the input terminal of thefirst phase-inversion element 101 through the switching element 104, andthe potential of the output terminal of the second phase-inversionelement 102 is output to a memory element or to another circuit of asubsequent stage as the signal OUT.

An output terminal of the first phase-inversion element 101 is connectedto the input terminal of the first phase-inversion element 101 via theswitching element 116.

The capacitor 105 is connected to an input terminal of the memoryelement 160, i.e., a node to which a potential of the signal IN issupplied, via the switching element 103 and the capacitor switchingelement 106 so that the data of the signal IN that is input to thememory element 160 can be stored as needed. Specifically, the capacitor105 includes a dielectric between a pair of electrodes. One of theelectrodes is connected to the input terminal of the firstphase-inversion element 101 via the capacitor switching element 106. Theother of the electrodes is connected to a node to which a potential VEsuch as a ground potential is supplied.

Note that in FIG. 9A, an example in which inverters are used as thefirst phase-inversion element 101 and the second phase-inversion element102 is illustrated; however, a clocked inverter can also be used as thefirst phase-inversion element 101 or the second phase-inversion element102 besides the inverter.

For the capacitor switching element 106, a transistor including a highlypurified oxide semiconductor in a channel formation region is used. Likethe capacitor switching element 106 in Embodiment 1, the capacitorswitching element 106 is formed above the first phase-inversion element101 and the second phase-inversion element 102 with use of an oxidesemiconductor, and the channel length is greater than or equal to 10 F,preferably greater than or equal to 20 F, further preferably greaterthan or equal to 50 F.

Note that the memory element 160 may further include another circuitelement such as a diode, a resistor, an inductor, or a capacitor asneeded.

In FIG. 9A, a transistor including a highly purified oxide semiconductorin the channel formation region is used as the capacitor switchingelement 106, so that the off-state current of the transistor isextremely low as described above. The capacitor switching element 106may include one transistor or a plurality of transistors.

In the case where a plurality of transistors which serve as switchingelements are included in the capacitor switching element 106, theplurality of transistors may be connected to each other in parallel, inseries, or in combination of parallel connection and series connection.

In this embodiment, at least a transistor used for a switching elementin the capacitor switching element 106 includes a highly purified oxidesemiconductor in a channel formation region. Each of the transistorsused for the first phase-inversion element 101, the secondphase-inversion element 102, the switching element 103, the switchingelement 104, and the switching element 116 can include a semiconductorother than an oxide semiconductor, e.g., an amorphous, microcrystalline,polycrystalline, or single crystal semiconductor can be used. As such amaterial of a semiconductor, silicon and germanium can be given.

The transistor may be manufactured with use of a thin semiconductor filmor a bulk semiconductor wafer. If a p-channel transistor including anoxide semiconductor film can be manufactured, all of the transistors inthe memory element can include an oxide semiconductor film as an activelayer, so that the process can be simplified.

Next, an example of the operation of the memory element illustrated inFIG. 9A is described. Note that the memory element can be operated by amethod other than the following description. Since data writing, inputdata retention, data writing to the capacitor 105, and the like are thesame as those in Embodiment 1, description thereof is omitted, and datarecovery will be described below.

In order to recover data stored in the capacitor 105, steps ofprecharge, discharge, and amplification are performed as inEmbodiment 1. In the step of precharge, the switching element 103, theswitching element 104, and the switching element 116 are turned on, andat least the signal IN, the potential of the first node, and thepotential of the second node are set to the precharge potential.

Since the switching element 116 is turned on here, the potential of theinput terminal of the second phase-inversion element 102 becomes theprecharge potential rapidly (within one microsecond). Given that theswitching element 116 is not provided in the circuit; both the firstnode and the second node of the first phase-inversion element 101 andthe second phase-inversion element 102 are kept at the low-levelpotential VSS; and the output terminal and the input terminal of thesecond phase-inversion element 102 are not electrically connected toeach other, it takes several milliseconds or more to set the inputterminal of the second phase-inversion element 102 to the prechargepotential after the first node and the second node are set to theprecharge potential.

After that, the switching element 103 and the switching element 116 areturned off. Discharge and amplification may be performed in the mannerdescribed in Embodiment 1. Note that although a thin film transistorformed with use of a highly purified oxide semiconductor is used as thecapacitor switching element 106 in the above, a thin film transistorformed with use of, for example, amorphous silicon, polysilicon, ormicrocrystalline silicon may be used.

The matter disclosed in this embodiment can be implemented inappropriate combination with the matter described in the otherembodiments.

Embodiment 7

In this embodiment, an SRAM will be described as another example of thepresent invention. FIG. 9B is a circuit diagram illustrating a memoryelement of this embodiment. A memory element 170 illustrated in FIG. 9Bat least includes a first phase-inversion element 101 and a secondphase-inversion element 102 by which the phase of an input signal isinverted and the signal is output, a switching element 117, a switchingelement 118, a capacitor 105, and a capacitor switching element 106.

The output terminal of the first phase-inversion element 101 isconnected to the input terminal of the second phase-inversion element102. The output terminal of the second phase-inversion element 102 isconnected to the input terminal of the first phase-inversion element101. Signal DATA+ including input-output data of the memory element 170is supplied to the input terminal of the first phase-inversion element101 through the switching element 117. Signal DATA− is supplied to theinput terminal of the second phase-inversion element 102 through theswitching element 118. Reversely, signal DATA− is output from the outputterminal of the first phase-inversion element 101 through the switchingelement 118, and signal DATA+ is output from the output terminal of thesecond phase-inversion element 102 through the switching element 117.

The capacitor 105 is connected to a node to which a potential of asignal DATA+ is supplied, via the switching element 117 and thecapacitor switching element 106 so that the data that is input to thememory element 170 can be stored as needed. Specifically, the capacitor105 includes a dielectric between a pair of electrodes. One of theelectrodes is connected to the input terminal of the firstphase-inversion element 101 via the capacitor switching element 106. Theother of the electrodes is connected to a node to which a potential VEsuch as a ground potential is supplied.

For the capacitor switching element 106, a transistor including a highlypurified oxide semiconductor in a channel formation region is used. Likethe capacitor switching element 106 in Embodiment 1, the capacitorswitching element 106 is formed above the first phase-inversion element101 and the second phase-inversion element 102 with use of an oxidesemiconductor, and the channel length is greater than or equal to 10 F,preferably greater than or equal to 20 F, further preferably greaterthan or equal to 50 F.

Note that the memory element 170 may further include another circuitelement such as a diode, a resistor, an inductor, or capacitor asneeded.

In FIG. 9B, a transistor including a highly purified oxide semiconductorin the channel formation region is used as the capacitor switchingelement 106, so that the off-state current of the transistor isextremely low as described above. The capacitor switching element 106may include one transistor or a plurality of transistors.

In the case where a plurality of transistors which serve as switchingelements are included in the capacitor switching element 106, theplurality of transistors may be connected to each other in parallel, inseries, or in combination of parallel connection and series connection.

In this embodiment, at least a transistor used for a switching elementin the capacitor switching element 106 includes a highly purified oxidesemiconductor in a channel formation region. Each of the transistorsused for the first phase-inversion element 101, the secondphase-inversion element 102, the switching element 117, and theswitching element 118, can include a semiconductor other than an oxidesemiconductor, e.g., an amorphous, microcrystalline, polycrystalline, orsingle crystal semiconductor can be used. As such a material of asemiconductor, silicon and germanium can be given.

The transistor may be manufactured with use of a thin semiconductor filmor a bulk semiconductor wafer. If a p-channel transistor including anoxide semiconductor film can be manufactured, all of the transistors inthe memory element can include an oxide semiconductor film as an activelayer, so that the process can be simplified.

Next, an example of the operation of the memory element illustrated inFIG. 9B is described. Note that the memory element can be operated by amethod other than the following description. A method of data writingand input data retention is the same as the known method for drivingSRAM except for that the capacitor switching element 106 is turned off.

Data writing to the capacitor 105 is performed in a state where thememory element 170 holds data. At this time, the switching element 117and the switching element 118 are turned off. In that state, thecapacitor switching element 106 is turned on and kept on for anappropriate period of time, whereby charge corresponding to data isstored in the capacitor 105. After that, the capacitor switching element106 is turned off. Further, the first node and the second node are madeto have the same potential.

Next, a method for recovering data will be described. In order torecover data stored in the capacitor 105, steps of precharge, discharge,and amplification are performed as in Embodiment 1. In the step ofprecharge, the switching element 117 and the switching element 118 areturned on, and at least the signal DATA+, the signal DATA−, thepotential of the first node, and the potential of the second node areset to the precharge potential.

After that, the switching element 117 and the switching element 118 areturned off. Discharge and amplification may be performed in the mannerdescribed in Embodiment 1. Note that although a thin film transistorformed with use of a highly purified oxide semiconductor is used as thecapacitor switching element 106 in the above, a thin film transistorformed with use of, for example, amorphous silicon, polysilicon, ormicrocrystalline silicon may be used.

The matter disclosed in this embodiment can be implemented inappropriate combination with the matter described in the otherembodiments.

Embodiment 8

In this embodiment, another example of a memory element included in amemory device of the present invention will be described. FIG. 12A is acircuit diagram illustrating a memory element of this embodiment. Amemory element 180 of this embodiment has a circuit configurationsimilar to that of the memory element 100 in FIGS. 1A and 1B, andincludes an MIS-type capacitor 119 instead of the capacitor 105. TheMIS-type capacitor 119 has a structure in which a dielectric is providedbetween a gate electrode and a semiconductor layer.

FIG. 12B is a schematic cross-sectional view of the memory element ofthis embodiment. This cross-sectional view corresponds to FIG. 8B. Notethat although the memory element in FIG. 12B includes components thesame as those of the memory element in FIGS. 7A to 7D and FIGS. 8A and8B, layouts of the source electrode 307 and the oxide semiconductorregion 308 in FIG. 12B are different from those in FIGS. 7A to 7D andFIGS. 8A and 8B. In this embodiment, capacitance is formed mainlybetween the oxide semiconductor region 308 and the capacitor wiring 310.On the other hand, in the memory element in FIGS. 7A to 7D and FIGS. 8Aand 8B, capacitance is formed mainly between the source electrode 307and the capacitor wiring 310.

The capacitance of the MIS-type capacitor 119 can be changed inaccordance with the potential of the gate electrode (capacitor wiring310 in this embodiment). For example, in the process of discharge, mostof all charge stored can be released by making the capacitance of theMIS-type capacitor 119 to be extremely small.

In order to form the memory element of this embodiment, for example, themost part of the source electrode 307 in FIG. 7B is not formed andinstead, the oxide semiconductor region 308 in FIG. 7C may be formed tooverlap with the part. In other words, the MIS-type capacitor can beformed by only changing the layouts of the source electrode 307 and theoxide semiconductor region 308.

Next, an example of the operation of the memory element 180 of thisembodiment is described with reference to FIGS. 13A to 13C and FIGS. 14Ato 14D. Note that the memory element can be operated by a method otherthan the following description. Note that in FIGS. 13A to 13C and FIGS.14A to 14D, transistors in an on-state, phase-inversion circuits in anactive state, and MIS-type capacitors with the maximum capacitance aremarked with a circle, and transistors in an off-state, phase-inversioncircuits in a non-active state, and MIS-type capacitors with the minimumcapacitance are marked with a cross.

<FIG. 13A>

Data is held in the memory element 180. At this time, the switchingelement 103 and the capacitor switching element 106 are in an off-stateand the switching element 104 is in an on-state. The capacitance of theMIS-type capacitor 119 is the maximum capacitance.

<FIG. 13B>

The capacitor switching element 106 is turned on. As a result, chargecorresponding to data is stored in the MIS-type capacitor 119.

<FIG. 13C>

Then, the switching element 104 and the capacitor switching element 106are turned off. The first node and the second node of the firstphase-inversion element and the second phase-inversion element are setto the same potential. Note that the switching element 104 may be kepton. In the above manner, the first phase-inversion element and thesecond phase-inversion element are deactivated. Data which has beenstored in the first phase-inversion element and the secondphase-inversion element can be held in the MIS-type capacitor 119.

<FIG. 14A>

Precharge is performed. Embodiment 1 can be referred to for the details.

<FIG. 14B>

The switching element 103 is turned off. Further, the capacitorswitching element 106 is turned on. As a result, the potential of theinput terminal of the first phase-inversion element varies in accordancewith the stored data.

<FIG. 14C>

The capacitance of the MIS-type capacitor 119 is made to be the minimumcapacitance. As a result, the potential of the input terminal of thefirst phase-inversion element varies more significantly.

<FIG. 14D>

After that, the first phase-inversion element and the secondphase-inversion element are activated so that a potential difference ofthe respective input terminals is amplified. Consequently, a state shownin FIG. 13A can be reproduced.

In the process of discharge, the potential of the input terminal of thefirst phase-inversion element can be changed more greatly in the memoryelement of this embodiment than in the memory element in FIGS. 3A and3B; therefore, an error is less likely to occur in the following processof amplification in the memory element of this embodiment.

For manufacturing the memory element of this embodiment, an additionalstep is not needed and only change of the layouts of the oxidesemiconductor region 308 and the source electrode 307 is needed.

Although a thin film transistor formed with use of a highly purifiedoxide semiconductor is used as the capacitor switching element 106 and athin-film capacitor formed with use of a highly purified oxidesemiconductor is used as the MIS-type capacitor in the above, a thinfilm transistor and a thin-film capacitor formed with use of, forexample, amorphous silicon, polysilicon, or microcrystalline silicon maybe used.

The matter disclosed in this embodiment can be implemented inappropriate combination with the matter described in the otherembodiments.

Embodiment 9

In this embodiment, a method for forming an oxide semiconductor film isdescribed with reference to FIGS. 8A and 8B. First, an oxidesemiconductor film is formed to have an appropriate thickness over theembedding insulator 314. The oxide semiconductor film can be formed by asputtering method in a rare gas (typically, argon) atmosphere, an oxygenatmosphere, or an atmosphere including a mixture of a rare gas (forexample, argon) and oxygen. For the oxide semiconductor film, theabove-described oxide semiconductor can be used.

Note that before the oxide semiconductor film is deposited by asputtering method, dust on a surface of the embedding insulator 314 ispreferably removed by reverse sputtering in which an argon gas isintroduced and plasma is generated. The reverse sputtering refers to amethod in which, without application of voltage to a target side, an RFpower source is used for application of voltage to a substrate side inan argon atmosphere and plasma is generated in the vicinity of thesubstrate to modify a surface. Note that instead of an argon atmosphere,a nitrogen atmosphere, a helium atmosphere, or the like may be used.Further, an argon atmosphere to which oxygen, nitrous oxide, or the likeis added to may be used. Further alternatively, an argon atmosphere towhich chlorine, carbon tetrafluoride, or the like is added may be used.

In this embodiment, as the oxide semiconductor film, an In—Ga—Zn-basedoxide non-single-crystal film with a thickness of 5 nm, which isobtained by a sputtering method using a metal oxide target containingindium (In), gallium (Ga), and zinc (Zn), is used. As the target, ametal oxide target with such a composition ratio of metal atoms thatIn:Ga:Zn=1:1:0.5, In:Ga:Zn=1:1:1, or In:Ga:Zn=1:1:2 can be used, forexample.

In this embodiment, since crystallization is intentionally caused byperforming heat treatment in a later step, it is preferable to use ametal oxide target by which crystallization is easily caused. The fillrate of the metal oxide target containing In, Ga, and Zn is higher thanor equal to 90% and lower than or equal to 100%, and preferably higherthan or equal to 95% and lower than or equal to 99.9%. When a metaloxide target having a high fill rate is used, the impurity concentrationin an oxide semiconductor film to be formed can be low, so that atransistor with excellent electric characteristics or high reliabilitycan be obtained.

The substrate is held in a treatment chamber kept under reducedpressure, a sputtering gas from which hydrogen and moisture are removedis introduced into the treatment chamber from which remaining moistureis being removed, and the oxide semiconductor film is formed over theinsulating surface with use of a metal oxide as a target. The substratetemperature may be in the range from 100° C. to 600° C. inclusive,preferably 200° C. to 400° C. inclusive during the film formation. Filmformation is performed while the substrate is heated, whereby theconcentration of an impurity contained in the formed oxide semiconductorfilm can be low and crystallinity can be increased. Further, damage bythe sputtering can be suppressed.

In order to remove remaining moisture in the treatment chamber, anentrapment vacuum pump is preferably used. For example, a cryopump, anion pump, or a titanium sublimation pump is preferably used. Theevacuation unit may be a turbo pump provided with a cold trap. In atreatment chamber which is exhausted with the cryopump, for example, ahydrogen atom, a compound containing a hydrogen atom, such as water(H₂O), (more preferably, also a compound containing a carbon atom), andthe like are removed, whereby the concentration of an impurity containedin the oxide semiconductor film formed in the treatment chamber can below.

An example of the deposition condition is as follows: the distancebetween the substrate and the target is 170 mm, the pressure is 0.4 Pa,the electric power of the direct current (DC) power source is 0.5 kW,and the atmosphere is an oxygen atmosphere (the proportion of the oxygenflow rate is 100%). Note that a pulsed direct-current (DC) power sourceis preferable because powder substances (also referred to as particles)generated in film deposition can be reduced and the film thickness canbe uniform. The preferable thickness of the oxide semiconductor film isfrom 1 nm to 30 nm inclusive. Since appropriate thickness depends on anoxide semiconductor material used, the thickness can be determined asappropriate depending on the material.

In order to contain hydrogen, a hydroxyl group, and moisture as littleas possible in the oxide semiconductor film, it is preferable that thesubstrate be preheated in a preheating chamber of a sputtering apparatusas pretreatment before formation of the oxide semiconductor film, sothat impurities such as hydrogen or moisture attached on the substrateare discharged and eliminated. The temperature for the preheating ishigher than or equal to 100° C. and lower than or equal to 600° C.,preferably higher than or equal to 150° C. and lower than or equal to300° C. As an evacuation unit provided in the preheating chamber, acryopump is preferable. Note that this preheating treatment can beskipped.

Next, heat treatment is performed and crystals are grown from a surfaceof the oxide semiconductor film, so that an oxide semiconductor film atleast part of which is crystallized or becomes single crystals isobtained. In the heat treatment, a temperature is higher than or equalto 450° C. and lower than or equal to 850° C., preferably higher than orequal to 600° C. and lower than or equal to 700° C. In addition, heatingtime is longer than or equal to 1 minute and shorter than or equal to 24hours.

The crystal layer grows from the surface to the inside portion andcontains plate-shaped crystals whose average thickness is greater thanor equal to 2 nm and less than or equal to 10 nm. Further, the crystallayer formed at the surface has an a-b plane parallel to the surface ofthe crystal layer and a c-axis alignment perpendicularly to the surfaceof the crystal layer. In this embodiment, the entire oxide semiconductorfilm may be crystallized (the crystals are also referred to asco-growing (CG) crystals) by the heat treatment.

Note that in the heat treatment, it is preferable that water, hydrogen,and the like be not contained in nitrogen, oxygen, or a rare gas such ashelium, neon, or argon. In addition, it is preferable that the purity ofnitrogen, oxygen, or a rare gas such as helium, neon, or argon which isintroduced to the heat treatment apparatus be 6N (99.9999%) or more,further preferably 7N (99.99999%) or more (that is, the impurityconcentration is 1 ppm or lower, further preferably 0.1 ppm or lower).Further, the heat treatment may be performed in a dry air atmospherewith an H₂O concentration lower than or equal to 20 ppm. In thisembodiment, heat treatment in a dry air atmosphere at 700° C. for onehour is performed.

Note that a heat treatment apparatus is not limited to an electricalfurnace, and may include a device for heating an object to be processedby heat conduction or heat radiation from a heating element such as aresistance heating element. For example, an RTA (rapid thermal anneal)apparatus such as a GRTA (gas rapid thermal anneal) apparatus or an LRTA(lamp rapid thermal anneal) apparatus can be used.

An LRTA apparatus is an apparatus for heating an object to be processedby radiation of light (an electromagnetic wave) emitted from a lamp suchas a halogen lamp, a metal halide lamp, a xenon arc lamp, a carbon arclamp, a high pressure sodium lamp, or a high pressure mercury lamp. AGRTA apparatus is an apparatus for performing heat treatment using ahigh-temperature gas. As the gas, an inert gas which does not react withan object to be processed by heat treatment, such as nitrogen or a raregas such as argon is used.

For example, the heat treatment can employ GRTA, in which the substrateis transferred into an inert gas heated at a high temperature of 650° C.to 700° C., and heated for several minutes there, and then taken outfrom the inert gas. With GRTA, high-temperature heat treatment for ashort period of time can be achieved.

Next, the oxide semiconductor region 308 is formed by a photolithographymethod. Note that a resist mask used in this process may be formed by aninkjet method. Formation of the resist mask by an inkjet method needs nophotomask; thus, manufacturing cost can be reduced.

The matter disclosed in this embodiment can be implemented inappropriate combination with the matter described in the otherembodiments.

Embodiment 10

FIG. 15A illustrates an example of a signal processing circuit accordingto one embodiment of the present invention, in which the memory elementdescribed in the above embodiment is used for a memory device. Thesignal processing circuit according to one embodiment of the presentinvention at least includes one or a plurality of arithmetic units andone or a plurality of memory devices. Specifically, a signal processingcircuit 400 in FIG. 15A includes an arithmetic circuit 401, anarithmetic circuit 402, a memory device 403, a memory device 404, amemory device 405, a control device 406, and a power supply controlcircuit 407.

The arithmetic circuits 401 and 402 each include, as well as a logiccircuit which carries out simple logic arithmetic processing, an adder,a multiplier, and various arithmetic units. The memory device 403functions as a register for temporarily holding data when the arithmeticprocessing is carried out in the arithmetic circuit 401. The memorydevice 404 functions as a register for temporarily holding data when thearithmetic processing is carried out in the arithmetic circuit 402.

In addition, the memory device 405 can be used as a main memory and canstore a program executed by the control device 406 as data or can storedata from the arithmetic circuit 401 and the arithmetic circuit 402.

The control device 406 is a circuit which collectively controlsoperations of the arithmetic circuit 401, the arithmetic circuit 402,the memory device 403, the memory device 404, and the memory device 405included in the signal processing circuit 400. Note that in FIG. 15B, astructure in which the control device 406 is provided in the signalprocessing circuit 400 as a part thereof is illustrated, but the controldevice 406 may be provided outside the signal processing circuit 400.

In the case where the memory element described in the above embodimentis used for at least one of the memory device 403, the memory device404, and the memory device 405, data can be held even when supply ofpower supply voltage to the memory device 403, the memory device 404,and the memory device 405 is partly or completely stopped. In the abovemanner, the supply of the power supply voltage to the entire signalprocessing circuit 400 can be stopped partly or completely, wherebypower consumption can be suppressed.

For example, the supply of the power supply voltage to one or more ofthe memory device 403, the memory device 404, and the memory device 405is stopped, whereby power consumption can be suppressed. Alternatively,for example, in FIGS. 1A and 1B, supply of VH or VL to the memoryelement 100 is stopped and the signal Sig. 3 is set to the certainartificial potential (that is a potential lower than the groundpotential by 0.5 V to 1.5 V), which is effective in reducing the powerconsumption.

When the signal Sig. 3 is set to the above potential, some current isconsidered to flow between the gate electrode and the oxidesemiconductor region in the capacitor switching element 106; however,the value of the current is too small to be measured. That is, thecurrent does not lead to power consumption. In contrast, when VH or VLis supplied to the memory element 100, the through current of theinverter is generated, and the considerable amount of power isaccordingly consumed. Thus, stop of the supplying VH and VL produces agreat effect of lowering power consumption.

Note that, as well as the supply of the power supply voltage to thememory device, the supply of the power supply voltage to the controlcircuit or the arithmetic circuit which transmits/receives data to/fromthe memory device may be stopped. For example, when the arithmeticcircuit 401 and the memory device 403 are not operated, the supply ofthe power supply voltage to the arithmetic circuit 401 and the memorydevice 403 may be stopped.

In addition, the power supply control circuit 407 controls the level ofthe power supply voltage which is supplied to the arithmetic circuit401, the arithmetic circuit 402, the memory device 403, the memorydevice 404, the memory device 405, and the control device 406 includedin the signal processing circuit 400. As described above, the powersupply control circuit controls VDD, VSS, and a potential of signal Sig.3 as needed, and thus, consumed power can be reduced in a mosteffectively manner.

When the supply of the power supply voltage is stopped, the supply ofthe power supply voltage to the power supply control circuit 407 may bestopped, or the supply of the power supply voltage to the arithmeticcircuit 401, the arithmetic circuit 402, the memory device 403, thememory device 404, the memory device 405, and the control device 406 maybe stopped.

That is, a switching element for stopping the supply of the power supplyvoltage may be provided for the power supply control circuit 407, oreach of the arithmetic circuit 401, the arithmetic circuit 402, thememory device 403, the memory device 404, the memory device 405, and thecontrol device 406. In the latter case, the power supply control circuit407 is not necessarily provided in the signal processing circuitaccording to the present invention.

A memory device which functions as a cache memory may be providedbetween the memory device 405 that is a main memory and each of thearithmetic circuit 401, the arithmetic circuit 402, and the controldevice 406. By providing the cache memory, low-speed access to the mainmemory can be reduced and the speed of the signal processing such asarithmetic processing can be higher. By applying the above-describedmemory element also to the memory device functioning as a cache memory,power consumption of the signal processing circuit 400 can besuppressed.

Embodiment 11

In this embodiment, a configuration of a CPU, which is one of signalprocessing circuits according to one embodiment of the presentinvention, will be described.

FIG. 15B illustrates a configuration of a CPU in this embodiment. TheCPU illustrated in FIG. 15B mainly includes an arithmetic logic unit(ALU) 411, an ALU controller 412, an instruction decoder 413, aninterrupt controller 414, a timing controller 415, a register 416, aregister controller 417, a bus interface (Bus I/F) 418, a rewritable ROM419, and a ROM interface (ROM I/F) 420, over a substrate 410. The ROM419 and the ROM interface 420 may be provided over another chip.Naturally, the CPU illustrated in FIG. 15B is only an example with asimplified configuration, and various configurations can be applied toan actual CPU depending on the application.

An instruction input to the CPU via the Bus I/F 418 is input to theinstruction decoder 413 and decoded therein, and then input to the ALUcontroller 412, the interrupt controller 414, the register controller417, and the timing controller 415.

In accordance with the decoded instruction, the ALU controller 412, theinterrupt controller 414, the register controller 417, and the timingcontroller 415 conduct various controls. Specifically, the ALUcontroller 412 generates a signal for controlling operation of the ALU411.

While the CPU is executing a program, the interrupt controller 414judges an interrupt request from an external input/output device or aperipheral circuit on the basis of its priority or a mask state, andprocesses the request. The register controller 417 generates an addressof the register 416 and reads/writes data from/to the register 416 inaccordance with the state of the CPU.

Further, the timing controller 415 generates a signal for controlling atiming of operation of the ALU 411, the ALU controller 412, theinstruction decoder 413, the interrupt controller 414, and the registercontroller 417. For example, the timing controller 415 includes aninternal clock generator for generating an internal clock signal CLK2based on a reference clock signal CLK1, and supplies the clock signalCLK2 to the above circuits.

In the CPU in this embodiment, the register 416 may include a memoryelement with the above structure described in the above embodiment. Theregister controller 417 selects operation of holding data in theregister 416 in accordance with the ALU 411.

That is, the register controller 417 determines whether data is held bya phase-inversion element or by a capacitor in the memory elementincluded in the register 416. When data holding by the phase-inversionelement is selected, power supply voltage is supplied to the memoryelement in the register 416. When data holding by the capacitor isselected, the data is rewritten in the capacitor, and supply of powersupply voltage to the memory element in the register 416 can be stopped.

In such a manner, even in the case where the operation of the CPU istemporarily stopped and the supply of the power supply voltage isstopped, data can be held and the consumed power can be reduced.Specifically, for example, while a user of a personal computer does notinput data to an input device such as a keyboard, the operation of theCPU can be stopped, so that the consumed power can be reduced.

Although the CPU is given as an example in this embodiment, the signalprocessing circuit of the present invention, without limitation to theCPU, can be applied to an LSI such as a DSP, a custom LSI, or a fieldprogrammable gate array (FPGA). With use of a signal processing circuitdescribed in the present invention, a highly reliable electronic deviceand an electronic device with low power consumption can be provided.

In particular, when to a portable electronic device which has difficultyin continuously receiving power from an external device, a signalprocessing circuit with low power consumption according to oneembodiment of the present invention is added as a component of thedevice, an advantage in increasing the continuous operation time can beobtained.

The signal processing circuit according to one embodiment of the presentinvention can be used for display devices, personal computers, or imagereproducing devices provided with recording media (typically, deviceswhich reproduce the content of recording media such as digital versatilediscs (DVDs) and have displays for displaying the reproduced images).

Other than the above, as an electronic device which can be provided withthe signal processing circuit according to one embodiment of the presentinvention, mobile phones, game machines (including portable gamemachines), portable information terminals, e-book readers, cameras suchas video cameras and digital still cameras, goggle-type displays (headmounted displays), navigation systems, audio reproducing devices (e.g.,car audio systems and digital audio players), copiers, facsimiles,printers, multifunction printers, automated teller machines (ATM),vending machines, and the like can be given.

This application is based on Japanese Patent Application serial no.2011-088815 filed with Japan Patent Office on Apr. 13, 2011, the entirecontents of which are hereby incorporated by reference.

1. (canceled)
 2. An electronic device comprising: a first data line; asecond data line; and a memory cell comprising: a first switchingelement; a second switching element; a third switching element; a firstinverter; a second inverter; and a first capacitor, wherein an output ofthe first inverter is input to the second inverter without passingthrough any switching element, wherein an output of the second inverteris input to the first inverter without passing through any switchingelement, wherein a signal of the first data line is configured to beinput to the first inverter via the first switching element when thefirst switching element is on, and not to be input when the secondswitching element is off, wherein a signal of the second data line isconfigured to be input to the second inverter via the second switchingelement when the second switching element is on, and not to be inputwhen the first switching element is off, wherein the output of thesecond inverter is configured to be input to the first capacitor via thethird switching element when the third switching element is on, and notto be input when the third switching element is off, wherein the firstswitching element and the second switching element are configured to besimultaneously turned on and off, and wherein the first switchingelement and the second switching element are configured to be off whenthe third switching element is on.
 3. The electronic device according toclaim 2, further comprising a fourth switching element and a secondcapacitor, wherein the output of the first inverter is configured to beinput to the second capacitor via the fourth switching element when thefourth switching element is on, and not to be input when the fourthswitching element is off, and wherein the third switching element andthe fourth switching element are configured to be simultaneously turnedon and off.
 4. The electronic device according to claim 2, wherein thefirst switching element and the second switching element are transistorscomprising single crystalline silicon, and wherein the third switchingelement is a transistor comprising a highly-purified oxidesemiconductor.
 5. The electronic device according to claim 4, wherein anoff current of the third switching element is 1 zA or lower.
 6. Theelectronic device according to claim 4, wherein a mobility of the thirdswitching element is lower than that of the first switching element. 7.A driving method of the electronic device according to claim 2, thedriving method comprising: turning on and off the first switchingelement and the second switching element so as to equalize the input ofthe first inverter and the input of the second inverter when the thirdswitching element is off, and turning on the third switching elementwhen the first switching element and the second switching element isoff.
 8. A driving method of the electronic device according to claim 2,the driving method comprising: supplying a first potential as the inputof the first inverter and the input of the second inverter when thethird switching element is off, and turning on the third switchingelement when the first switching element and the second switchingelement is off.
 9. A driving method of the electronic device accordingto claim 2, the driving method comprising a first period and a secondperiod after the first period, wherein, in the first period, a bit ofdata stored in the first inverter and the second inverter is transferredto the first capacitor by turning on and off the third switchingelement, followed by powering off the first inverter and the secondinverter, and wherein, in the second period, the bit of data stored inthe first capacitor is transferred to the first inverter and the secondinverter and amplified there by turning on the third switching elementand by powering the first inverter and the second inverter, followed byturning off the third switching element and by powering off the firstinverter and the second inverter.
 10. The driving method according toclaim 9, further comprising a third period after the second period,wherein, in the third period, the bit of data stored in the firstcapacitor is transferred to the first inverter and the second inverterand amplified there by turning on the third switching element and bypowering the first inverter and the second inverter, followed by turningoff the third switching element and by powering off the first inverterand the second inverter.
 11. An electronic device comprising: a firstdata line; a second data line; and a memory cell comprising: a firstswitching element; a second switching element; a third switchingelement; a first inverter; a second inverter; and a first capacitor,wherein an output terminal of the first inverter is directly connectedwith an input terminal of the second inverter, wherein an outputterminal of the second inverter is directly connected with an inputterminal of the first inverter, wherein the first data line iselectrically connectable with the input terminal of the first inverterand the output terminal of the second inverter via the first switchingelement, wherein the second data line is electrically connectable withthe input terminal of the second inverter and the output terminal of thefirst inverter via the second switching element, wherein the inputterminal of the first inverter and the output terminal of the secondinverter are electrically connectable with one electrode of the firstcapacitor via the third switching element, wherein the first switchingelement and the second switching element are configured to besimultaneously turned on and off, and wherein the first switchingelement and the second switching element are configured to be off whenthe third switching element is on.
 12. The electronic device accordingto claim 11, further comprising a fourth switching element and a secondcapacitor, wherein the input terminal of the second inverter and theoutput terminal of the first inverter are electrically connectable withone electrode of the second capacitor via the fourth switching element,and wherein the third switching element and the fourth switching elementare configured to be simultaneously turned on and off.
 13. Theelectronic device according to claim 11, wherein the first switchingelement and the second switching element are transistors comprisingsingle crystalline silicon, and wherein the third switching element is atransistor comprising a highly-purified oxide semiconductor.
 14. Theelectronic device according to claim 13, wherein an off current of thethird switching element is 1 zA or lower.
 15. The electronic deviceaccording to claim 13, wherein a mobility of the third switching elementis lower than that of the first switching element.
 16. A driving methodof the electronic device according to claim 11, the driving methodcomprising: turning on and off the first switching element and thesecond switching element so as to equalize potentials of the inputterminal of the first inverter and the input terminal of the secondinverter when the third switching element is off, and turning on thethird switching element when the first switching element and the secondswitching element is off.
 17. A driving method of the electronic deviceaccording to claim 11, the driving method comprising: supplying a firstpotential to both of the input terminal of the first inverter and theinput terminal of the second inverter when the third switching elementis off, and turning on the third switching element when the firstswitching element and the second switching element is off.
 18. A drivingmethod of the electronic device according to claim 11, the drivingmethod comprising a first period and a second period after the firstperiod, wherein, in the first period, a bit of data stored in the firstinverter and the second inverter is transferred to the first capacitorby turning on and off the third switching element, followed by poweringoff the first inverter and the second inverter, and wherein, in thesecond period, the bit of data stored in the first capacitor istransferred to the first inverter and the second inverter and amplifiedthere by turning on the third switching element and by powering thefirst inverter and the second inverter, followed by turning off thethird switching element and by powering off the first inverter and thesecond inverter.
 19. The driving method according to claim 18, furthercomprising a third period after the second period, wherein, in the thirdperiod, the bit of data stored in the first capacitor is transferred tothe first inverter and the second inverter and amplified there byturning on the third switching element and by powering the firstinverter and the second inverter, followed by turning off the thirdswitching element and by powering off the first inverter and the secondinverter.